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3SK245

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SUPER MINIMOLD PACKAGE-4
CategoryThe transistor   
File Size3MB,226 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

3SK245 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SUPER MINIMOLD PACKAGE-4

3SK245 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.25 W
Minimum power gain (Gp)20 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
C
&
C
for Human Potential
Microcomputer
1
SEMICONDUCTOR
SELECTION GUIDE
GUIDE
BOOK
IC Memory
2
Semi-Custom IC
3
Particular Purpose IC
4
General Purpose Linear IC
5
Transistor / Diode / Thyristor
6
Microwave Device / Consumer Use High Frequency Device
7
Optical Device
8
Packages
9
Index (Quick Reference by Type Number)
10
Oct. 1995
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