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SF11SG_1

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size180KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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SF11SG_1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

SF11SG - SF18SG
1.0 AMP. Glass Passivated Super Fast Rectifiers
A-405
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 0.22 gram
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SF
SF
SF
Symbol
SF
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
o
@ T
A
=25 C at Rated DC Blocking Voltage
o
@ T
A
=125 C
Maximum Reverse Recovery Time
(Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal resistance
Operating Temperature Range
Storage Temperature Range
Notes:
Maximum Ratings and Electrical Characteristics
SF
SF
SF
SF
18SG
11SG 12SG 13SG 14SG 15SG 16SG 17SG
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
nS
Cj
R
θJA
T
J
50
35
50
100 150 200 300 400 500 600
70 105 140 210 280 350 420
100 150 200 300 400 500 600
1.0
30
0.95
5.0
100
35
20
95
-65 to +150
-65 to +150
10
o
1.3
1.7
V
uA
uA
nS
pF
C/W
o
C
o
C
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
Version: A06

SF11SG_1 Related Products

SF11SG_1 SF11SG SF13SG
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE
Is it Rohs certified? - conform to conform to
Maker - Taiwan Semiconductor Taiwan Semiconductor
package instruction - O-PALF-W2 O-PALF-W2
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Other features - FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY
Shell connection - ISOLATED ISOLATED
Configuration - SINGLE SINGLE
Diode component materials - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 0.95 V 0.95 V
JESD-30 code - O-PALF-W2 O-PALF-W2
Humidity sensitivity level - 1 1
Maximum non-repetitive peak forward current - 30 A 30 A
Number of components - 1 1
Number of terminals - 2 2
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C
Maximum output current - 1 A 1 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND
Package form - LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 50 V 150 V
Maximum reverse recovery time - 0.035 µs 0.035 µs
surface mount - NO NO
Terminal surface - Pure Tin (Sn) Pure Tin (Sn)
Terminal form - WIRE WIRE
Terminal location - AXIAL AXIAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED

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