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MG100Q2YS11

Description
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
CategoryDiscrete semiconductor    The transistor   
File Size403KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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MG100Q2YS11 Overview

GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

MG100Q2YS11 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknow
Maximum collector current (IC)100 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)1000 ns
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max2.7 V
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