Semiconductor
PN2222A
NPN Silicon Transistor
Descriptions
•
General purpose application
•
Switching application
Features
•
Low Leakage current
•
Low collector saturation voltage enabling low voltage operation
•
Complementary pair with PN2907A
Ordering Information
Type NO.
PN2222A
Marking
PN2222A
Package Code
TO-92
Outline Dimensions
3.45±0.1
4.5±0.1
2.25±0.1
unit :
mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
14.0±0.40
1.27 Typ
.
2.54 Typ
.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
1.20±0.1
0.38
KST-9008-000
1
PN2222A
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Ta=25°C
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
75
40
5
600
625
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Ta=25°C
°
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=75V, I
E
=0
V
CE
=10V, I
C
=10mA
I
C
=150mA, I
B
=15mA
V
CE
=20V, I
C
=20mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V
dc
, V
BE(off)
=0.5V
dc
,
I
C
=150mA
dc
, I
B1
=15mA
dc
V
CC
=30V
dc
,I
C
=150mA
dc
,
I
B1
=I
B2
=15mA
dc
Min. Typ. Max.
75
40
5
-
100
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
0.4
-
8
10
25
225
60
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KST-9008-000
2
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