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5962-3829446MZX

Description
Standard SRAM, 8KX8, 12ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
Categorystorage   
File Size170KB,12 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

5962-3829446MZX Overview

Standard SRAM, 8KX8, 12ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

5962-3829446MZX Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time12 ns
JESD-30 codeR-CDIP-T28
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.715 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
Base Number Matches1
SRAM
MT5C6408
8K x 8 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-38294
• MIL-STD-883
PIN ASSIGNMENT
(Top View)
28-Pin DIP (C)
(300 MIL)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
28-Pin LCC (EC)
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\ and CE2
• All inputs and outputs are TTL compatible
28-Pin Flat Pack (F)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
Ceramic Flatpack
MARKING
-12
-15
-20
-25
-35
-45
-55*
-70*
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
GENERAL DESCRIPTION
No. 108
No. 204
No. 302
The MT5C6408, 8K x 8 SRAM, employs high-speed,
low-power CMOS technology, eliminating the need for clocks
or refreshing. These SRAM’s have equal access and cycle
times.
For flexibility in high-speed memory applications,
Micross Components offers dual chip enables (CE1\, CE2)
and output enable (OE\) capability. These enhancements can
place the outputs in High-Z for additional flexibility in system
design.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH
and CE1\ and OE\ go LOW. The device offers a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
These devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
C
EC
F
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns ac-
cess devices.
For more products and information
please visit our web site at
www.micross.com
MT5C6408
Rev. 4.2 01/10
Micross Components reserves the right to change products or specifications without notice.
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