Ordering number : ENN7988
2SA2125 / 2SC5964
2SA2125 / 2SC5964
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
( ) : 2SA2125
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board (250mm
!0.8m)
2
Conditions
Ratings
(--50)100
(--50)100
(--)50
(--)6
(--)3
(--)6
(--)600
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Tc=25°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
200
(390)380
(24)13
Ratings
min
typ
max
(-
-)1
(-
-)1
560
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3004 TS IM TB-00000265 No.7988-1/5
2SA2125 / 2SC5964
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=(--)1A, IB=(--)50mA
IC=(--)2A, IB=(-
-)100mA
VCE=(--)2V, IB=(-
-)100mA
IC=(--)10µA, IE=0
IC=(--)100µA, RBE=0
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
(--50)100
(--50)100
(-
-)50
(--)6
(30)35
(230)300
(18)25
Ratings
min
typ
(--125)100
(--250)190
(--)0.94
max
(--230)150
(--500)290
(--)1.2
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2038B
4.5
1.6
1.5
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
+
470µF
VCC=25V
RB
PW=20µs
D.C.≤1%
INPUT
RL
2.5
1
0.4
0.5
1.5
3.0
2
3
1.0
4.0
0.4
VBE= --5V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
--5.0
IC -- VCE
2SA2125
--250
mA
mA
--200
50mA
--1
mA
--100
--50m
A
5.0
IC -- VCE
2SC5964
100m
A
80mA
60mA
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Collector Current, IC -- A
Collector Current, IC -- A
40mA
20mA
--20mA
10mA
5mA
--10mA
--5mA
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
IB=0
--1.8
--2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0
1.8
2.0
Collector-to-Emitter Voltage, VCE -- V
IT07258
Collector-to-Emitter Voltage, VCE -- V
IT07259
No.7988-2/5
2SA2125 / 2SC5964
--3.0
IC -- VBE
2SA2125
VCE= --2V
3.0
IC -- VBE
2SC5964
VCE=2V
--2.5
2.5
Collector Current, IC -- A
--2.0
Collector Current, IC -- A
2.0
--1.5
1.5
--1.0
1.0
5
°
C
25
°
C
--25
°
C
--0.5
0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT07260
0
0
0.2
0.4
Ta=7
5
°
C
25
°
C
--25
°
C
0.6
0.8
Ta=
7
1.0
1.2
IT07261
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
2SA2125
VCE= --2V
Ta=75°C
7
2SC5964
VCE=2V
Ta=75°C
DC Current Gain, hFE
5
DC Current Gain, hFE
3
2
25°C
--25
°C
25°C
--25°C
3
2
100
7
5
3
--0.01
100
7
0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
1000
IT07262
1000
Collector Current, IC -- A
IT07263
f T -- IC
f T -- IC
2SC5964
VCE=10V
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
5
7
5
2SA2125
VCE= --10V
7
5
3
2
3
2
100
7
5
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
100
7
5
3
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
100
IT07264
100
Cob -- VCB
Collector Current, IC -- A
IT07265
Cob -- VCB
2SA2125
f=1MHz
Output Capacitance, Cob -- pF
2SC5964
f=1MHz
Output Capacitance, Cob -- pF
7
7
5
5
3
3
2
2
10
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 --100
IT07266
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 100
IT07267
No.7988-3/5
2SA2125 / 2SC5964
7
5
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA2125
IC / IB=20
5
3
2
VCE(sat) -- IC
2SC5964
IC / IB=20
3
2
0.1
7
5
3
2
--0.1
7
5
3
2
=
Ta
°
C
75
Ta
°
C
75
=
--2
5
°
C
°
C
25
°
C
25
°
C
-25
-
0.01
7
5
0.01
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
3
2
IT07268
7
Collector Current, IC -- A
IT07269
VCE(sat) -- IC
25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
VCE(sat) -- IC
2SC5964
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA2125
IC / IB=50
5
3
2
5
3
2
--0.1
7
5
3
2
75
°
C
7
Ta=
--2
5
°
C
--1.0
0.1
7
5
3
2
Ta=
°
--25
C
C
75
°
°
C
25
C
5
°
=7
Ta
--2
5
°
C
°
C
25
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
3
IT07270
3
VBE(sat) -- IC
Collector Current, IC -- A
IT07271
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA2125
IC / IB=20
2
2SC5964
IC / IB=20
2
--1.0
Ta= --25
°
C
75
°
C
1.0
Ta= --25
°
C
75
°
C
7
7
25
°C
5
5
25
°C
3
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
10
7
5
3
IT07272
1.4
1.3
1.2
ASO
Collector Current, IC -- A
IT07273
PC -- Ta
ICP=6A
IC=3A
<10µs
2SA2125 / 2SC5964
M
ou
nt
ed
1m
10
0m
s
DC
s
Collector Current, IC -- A
2
1.0
7
5
3
2
0.1
7
5
3
2
10
ms
op
era
Collector Dissipation, PC -- W
s
0
µ
10
1.0
on
ac
50
s
0
µ
er
tio
n
0.8
am
ic
bo
ar
d
0.6
(2
50
m
0.4
m
2
!
0.01
0.1
2SA2125 / 2SC5964
Tc=25°C
Single Pulse
(For PNP, minus sign is omitted.)
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
0.
8m
m
0.2
0
0
20
40
60
80
100
120
)
140
160
Collector-to-Emitter Voltage, VCE -- V
IT07274
Ambient Temperature, Ta --
°C
IT07275
No.7988-4/5
2SA2125 / 2SC5964
4.0
3.5
PC -- Tc
2SA2125 / 2SC5964
Collector Dissipation, PC -- W
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
Case Temperature, Tc --
°C
60
80
100
120
140
160
IT07276
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
PS No.7988-5/5
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