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2SC4501

Description
Silicon NPN Epitaxial
File Size22KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SC4501 Overview

Silicon NPN Epitaxial

2SC4501(L)/(S)
Silicon NPN Epitaxial
Application
High gain amplifier and medium speed switching
Outline
DPAK
4
4
1
2
3
12
1. Base
2. Collector
3. Emitter
4. Collector
2, 4
1
S Type
3
3
L Type

2SC4501 Related Products

2SC4501 2SC4501L 2SC4501S
Description Silicon NPN Epitaxial Silicon NPN Epitaxial Silicon NPN Epitaxial
package instruction - IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR
Maximum collector current (IC) - 3 A 3 A
Collector-emitter maximum voltage - 30 V 30 V
Configuration - DARLINGTON DARLINGTON
Minimum DC current gain (hFE) - 2000 2000
JESD-30 code - R-PSIP-T3 R-PSSO-G2
Number of components - 2 2
Number of terminals - 3 2
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 10 W 10 W
Certification status - Not Qualified Not Qualified
surface mount - NO YES
Terminal form - THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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