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2SK3644-01

Description
N-CHANNEL SILICON POWER MOSFET
File Size88KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2SK3644-01 Overview

N-CHANNEL SILICON POWER MOSFET

2SK3644-01
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
100
70
±41
±164
±30
41
204.7
20
5
2.02
150
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C *4 V
DS
<100V
=
=
=
=
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
*2 Tch <150°C
=
*5 V
GS
=-30V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
V
CC
=50V
I
D
=30A
V
GS
=10V
L=146µH T
ch
=25°C
I
F
=30A V
GS
=0V T
ch
=25°C
I
F
=30A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
34
18
1110
280
22
16
23
31
16
32
13
9
1.10
0.1
0.38
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
44
1665
420
33
24
35
47
24
48
20
14
1.65
Units
V
V
µA
nA
mΩ
S
pF
9
ns
nC
41
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.833
62.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
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