ASDL-5880
High Speed Photodiode in Top View Package
Data Sheet
Description
ASDL-5880 is a Silicon PIN Photodiode encapsulated in
clear Top View low profile package. It is ideal for applica-
tions from 700nm to 1100nm that require high sensitivity
with low dark current and short switching time.
Features
•
Top View Package
•
Short Switching Time
•
High Sensitivity
•
Low Dark Current
•
•
•
•
Low Junction Capacitance
Wide viewing Angle
Lead Free & ROHS Compliant
Available in Tape & Reel
Applications
•
IR Remote Control for Consumer Device
•
IR Remote Control for Industrial Electronics &
Equipment
•
High Speed IR data communication
Ordering Information
Part Number
ASDL-5880-C
ASDL-5880-C3
Lead Form
Straight
Color
Clear
Packaging
Tape & Reel
Bulk
Shipping Option
4000pcs
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protuded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Active area: 49 x 49 mm
2
6. Refractive index of epoxy: ή= 1.5.
7. Specifications are subject to change without notice.
Absolute Maximum Ratings at T
A
=25°C
Parameter
Power Dissipation
Reverse Voltage (Ir=00uA)
Operating Temperature
Storage Temperature
Junction temperature
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
Symbol
P
DISS
V
R
T
O
T
S
T
J
60°C for 5 seconds
-40
-55
Min.
Max
50
30
85
00
0
Unit
mW
V
°C
°C
°C
Electrical Characteristics at 25°C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Symbol
V
F
V
BR
I
D
CO
-
5
30
30
Min.
Typ.
Max.
.3
Unit
V
V
nA
pF
Condition
If = 50mA
Ir= 00uA
Ee = 0mW/cm
VR=0V
Ee=0mW/cm
Vr = 3V
F = MHZ
Ee = 0mW/cm
λ = 940nm
Ee=0.5mW/cm
Open Circuit Voltage
Thermal Resistance,
Junction to Pin
V
OC
Rq
JP
-
350
375
mV
°C/W
Optical Characteristics at 25°C
Parameter
Photocurrent
Symbol
I
PH
Min.
Typ.
3
Max.
Unit
uA
Condition
Ee = 0.5mW/cm
λ = 940nm
Vr = 5V
λ = 940nm
Vr = 5V
Radiant Sensitive Area
Absolute Spectral Sensitivity
Viewing Angle
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
A
S
θ
/
λ
PK
Δλ
t
r
700
.55
0.6
80
900
900
5
00
mm
A/W
Deg
nm
nm
ns
V
R
= 0V
λ = 850nm
R
L
= K Ω
V
R
= 0V
λ = 850nm
R
L
= K Ω
Fall Time
t
f
5
ns
3
Typical Electrical/Optical Characteristics Curves (T
A
=25˚C unless otherwise indicated)
pA
4000
100
pF
3000
80
Dark Current ID
Capacitance Ct
60
2000
40
1000
20
0
0
5
10
15
20 V
0
10
-2
10
-1
10
0
10
1
10 V
2
Reverse Voltage VR
Figure 1. DARK CURRENT VS. REVERSE VOLTAGE
TA=25°C, Ee=0 mW/cm
2
Reverse Voltage VR
Figure 2. CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm
2
nA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
-1
10
3
10
2
Is amb
Is 25
o
Dark Current ID
-20
0
20
40
60
80 C
o
Photocurrent
10
1
10
0
0
20
40
60
80
100 C
o
Ambient Temperature
Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE
Ambient Temperature
Figure 4. DARK CURRENT AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm
2
4
Typical Electrical/Optical Characteristics Curves (T
A
=25˚C unless otherwise indicated) Cont.
100
%
10
2
uA
Relative Spectral Sensitivity
80
10
60
1
Photocurrent Ip
10
0
40
20
10
-1
0
200
400
600
800 1000 1200
Wavelength
Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH
10
-2
10
-2
10
-1
10
0
10
1
mW
2
CM
Irradiance Ee
Figure 6. PHOTOCURRENT VS IRRADIANCE
λ
= 940 nm
0
o
10
o
20
o
175
30
40
50
60
o
Total Power Dissipation mW
o
Relative Sensitivity
125
o
1.0
0.9
0.8
0.7
o
75
o
70
o
80
100
0.5 0.3
0 0.2 0.4 0.6
o
25
0
-40 -20
o
0
20 40 60 80 100 C
Ambient Temperature
Figure 7. SENSITIVITY DIAGRAM
Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
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Data subject to change. Copyright © 007 Avago Technologies Limited. All rights reserved.
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