Battrax®
Single Port Negative SLIC Protector
RoHS
(G)
5
This programmable
Battrax
device is referenced to a negative voltage source. This
dual-chip package includes internal diodes for transient protection from positive surge
events.
SIDACtor Devices
di/dt
Amps/µs
500
500
1
(T)
2
(-V
REF
)
3
(R)
For a diagram of a
Battrax
application, see Figure 6.47 in Section 6, “Reference
Designs” of this
Telecom Design Guide.
Electrical Parameters
Part
Number *
B1101U_L
B1161U_L
B1201U_L
V
DRM
Volts
|-V
REF
| + |-1.2V|
|-V
REF
| + |-1.2V|
|-V
REF
| + |-1.2V|
V
S
Volts
|-V
REF
| + |-10V|
|-V
REF
| + |-10V|
|-V
REF
| + |-10V|
V
T
Volts
4
4
4
V
F
Volts
5
5
5
I
DRM
µAmps
5
5
5
I
GT
mAmps
100
100
100
I
T
Amps
2.2
2.2
2.2
I
H
mAmps
100
160
200
*
“L” in part number indicates RoHS compliance.
For non-RoHS compliant device, delete “L” from part number.
For individual “UA” and “UC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• I
PP
ratings assume a V
REF
= -48 V.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• V
REF
maximum value for the B1101, B1161, and/or B1201 is -200 V.
Surge Ratings in Amps
I
PP
Series
0.2x310 * 2x10 *
8x20 *
0.5x700 ** 2x10 ** 1.2x50 **
Amps
A
C
20
50
Amps
150
500
Amps
150
400
10x160 *
10x160 **
Amps
90
200
10x560 *
10x560 **
Amps
50
150
5x320 *
9x720 **
Amps
75
200
10x360 * 10x1000 * 5x310 *
I
TSM
10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
Amps
75
175
Amps
45
100
Amps
75
200
Amps
20
50
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 77
www.littelfuse.com
Battrax® Single Port Negative SLIC Protector
Thermal Considerations
Package
Modified MS-013
6
5
4
1
2
3
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +125
-65 to +150
60
Unit
°C
°C
°C/W
Capacitance Values
pF
Part Number
B1101UAL
B1101UCL
B1161UAL
B1161UCL
B1201UAL
B1201UCL
MIN
50
50
50
50
50
50
MAX
200
200
200
200
200
200
Note: Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
+I
V
F
I
PP
– Peak Pulse Current – %I
PP
100
Peak
Value
t
r
= rise time to peak value
t
d
= decay time to half value
V
S
V
DRM
-V
V
T
+V
Waveform = t
r
x t
d
I
DRM
I
H
I
GT
I
T
-I
50
Half Value
0
0
t
r
t
d
t – Time (µs)
V-I Characteristics
14
12
10
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
t
r
x t
d
Pulse Waveform
Percent of V
S
Change – %
I
H
(T
C
= 25 ˚C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Case Temperature (T
C
) – ˚C
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide
Microcontroller MCU
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