DPS512S8AP-35C datasheet, PDF - EEWORLD Datasheet

DPS512S8AP-35C: DescriptionSRAM Module, 512KX8, 35ns, CMOS, CDMA32, CERDIP-32; Categorystorage; File Size131KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPS512S8AP-35C Overview

SRAM Module, 512KX8, 35ns, CMOS, CDMA32, CERDIP-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.001 A
Minimum standby current	2 V
Maximum slew rate	0.23 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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