DPS512S8AP-35I datasheet, PDF - EEWORLD Datasheet

DPS512S8AP-35I: DescriptionSRAM Module, 512KX8, 35ns, CMOS, CDMA32, CERDIP-32; Categorystorage; File Size131KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPS512S8AP-35I Overview

SRAM Module, 512KX8, 35ns, CMOS, CDMA32, CERDIP-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0016 A
Minimum standby current	2 V
Maximum slew rate	0.245 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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