BT100-8 datasheet, PDF - EEWORLD Datasheet

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BT100-8: DescriptionSensitive Gate Silicon Controlled Rectifiers; CategoryAnalog mixed-signal IC Trigger device; File Size422KB，5 Pages; ManufacturerKODENSHI; Websitehttp://www.kodenshi.co.jp

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BT100-8 Overview

Sensitive Gate Silicon Controlled Rectifiers

BT100-8 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	0.5 mA
Maximum DC gate trigger voltage	1.2 V
Maximum holding current	10 mA
Maximum leakage current	0.2 mA
On-state non-repetitive peak current	10 A
Maximum on-state voltage	1.7 V
Maximum on-state current	500 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	660 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

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BT100-8

Sensitive Gate Silicon Controlled Rectifiers

Features

◇

Repetitive Peak Off-State Voltage : 600V

◇

R.M.S On-State Current (IT(RMS)=0.8 A)

◇

Low On-State Voltage (1.2V(Typ.)@ITM)

General Description

Sensitive triggering SCR is suitable for the application

where gate current limited such as small motor control,

gate driver for large SCR, sensing and detecting circuits.

Absolute Maximum Ratings

(TJ=25

℃

unless otherwise specified)

Symbol

DRM

T(AV)

T(RMS)

TSM

2 t

G(AV)

FGM

RGM

STG

Parameter

Repetitive Peak Off-state Voltage

Average On-State Current

R.M.S On-State Current

Surge On-State Current

I²

for Fusing

Forward Peak Gate Power

Dissipation

Forward Average Gate Power

Dissipation

Forward Peak Gate Current

Reverse Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

Condition

Ratings

600

Units

A²

Half Sine Wave : T

=74℃

All Conduction Angle

1/2 Cycle, 60Hz, Sine Wave Non-

Repetitive

t = 8.3ms

=25℃, Pulse Width≤1.0㎲

=25℃, t=8.3ms

0.5

0.8

0.415

0.1

5.0

-40

125

150

℃

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