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31DF2(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, DO-27,
Categorydiode    Rectifier diode   
File Size54KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

31DF2(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, DO-27,

31DF2(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.03 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cost
GALAXY ELECTRICAL
31DF1(Z) --- 31DF2(Z)
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.6 A
SUPER FAST RECTIFIERS
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL-STD202,method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
31DF1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
31DF2
200
140
200
1.6
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ I
F
=1.6A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T =25
A
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
50.0
30
90
34
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264016
BL
GALAXY ELECTRICAL
1.

31DF2(Z) Related Products

31DF2(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to
Maker Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2
Reach Compliance Code unknown
ECCN code EAR99
application SUPER FAST RECOVERY
Shell connection ISOLATED
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 0.98 V
JEDEC-95 code DO-27
JESD-30 code O-PALF-W2
Maximum non-repetitive peak forward current 125 A
Number of components 1
Phase 1
Number of terminals 2
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Maximum output current 1.6 A
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form LONG FORM
Maximum repetitive peak reverse voltage 200 V
Maximum reverse current 5 µA
Maximum reverse recovery time 0.03 µs
surface mount NO
Terminal form WIRE
Terminal location AXIAL
Base Number Matches 1
Crossover
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