BAV18_07 datasheet, PDF - EEWORLD Datasheet

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BAV18_07: Description0.25 A, 60 V, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size92KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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BAV18_07 Overview

0.25 A, 60 V, SILICON, SIGNAL DIODE, DO-35

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BAV18 ... BAV21

Superfast Switching Si-Planar Diodes

Superschnelle Si-Planar-Dioden

Version 2005-08-15

Max. power dissipation

Max. Verlustleistung

1.9

500 mW

50...200 V

DO-35

(SOD-27)

0.13 g

BAV100...BAV102

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

Glass case

Glasgehäuse

Weight approx.

Gewicht ca.

62.5

3.9

0.52

Equivalent SMD-version

Äquvalente SMD-Ausführung

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Dimensions - Maße [mm]

Maximum ratings (T

=25°C)

Type

Typ

BAV18

BAV19

BAV20

BAV21

Max. power dissipation

Max. Verlustleistung

Max. average forward rectified current, R-load

Dauergrenzstrom in Einwegschaltung mit R-Last

Repetitive peak forward current

Periodischer Spitzenstrom

Peak forward surge current, t

≤

1 s

Stoßstrom, t

≤

1 s

Peak forward surge current, t

≤

1 µs

Stoßstrom, t

≤

1 µs

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

RRM

[V]

100

150

200

TA = 25°C

f > 15 Hz

= 25°C

tot

FAV

FRM

FSM

Grenzwerte (T

=25°C)

Surge peak reverse voltage

Stoßspitzensperrspannung

RSM

[V]

)

120

200

250

500 mW

)

250 mA

)

650 mA

)

-50...+200°C

Tested with pulses I

= 100 µA, t

= 300 µs, duty cycle

≤

Gemessen mit Impulsen I

= 100 µA, t

= 300 µs, Schaltverhältnis

≤

Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

BAV18_07 Related Products

	BAV18_07	BAV18	BAV19	BAV20	BAV21
Description	0.25 A, 60 V, SILICON, SIGNAL DIODE, DO-35	0.25 A, 60 V, SILICON, SIGNAL DIODE, DO-35	0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35	0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35	0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
Is it Rohs certified?	-	conform to	conform to	conform to	conform to
Maker	-	DIOTEC	DIOTEC	DIOTEC	DIOTEC
Parts packaging code	-	DO-35	DO-35	DO-35	DO-35
package instruction	-	ROHS COMPLIANT, GLASS PACKAGE-2	ROHS COMPLIANT, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2
Contacts	-	2	2	2	2
Reach Compliance Code	-	compliant	compli	compliant	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	1 V	1 V	1 V	1 V
JEDEC-95 code	-	DO-35	DO-35	DO-35	DO-35
JESD-30 code	-	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Humidity sensitivity level	-	1	1	1	1
Number of components	-	1	1	1	1
Number of terminals	-	2	2	2	2
Maximum operating temperature	-	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	-	0.25 A	0.25 A	0.25 A	0.25 A
Package body material	-	GLASS	GLASS	GLASS	GLASS
Package shape	-	ROUND	ROUND	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	260	260	260	260
Maximum power dissipation	-	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	-	50 V	100 V	150 V	200 V
Maximum reverse recovery time	-	0.05 µs	0.05 µs	0.05 µs	0.05 µs
surface mount	-	NO	NO	NO	NO
Terminal form	-	WIRE	WIRE	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	-	1	1

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