BC846W datasheet, PDF - EEWORLD Datasheet

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BC846W: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size96KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BC846W Overview

RF SMALL SIGNAL TRANSISTOR

BC846W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC846W ... BC849W

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2

±0.1

0.3

3

NPN

200 mW

SOT-323

0.01 g

Version 2006-06-27

1

±0.1

1.25

±0.1

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Type

Code

1

2

1.3

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

A

= 25°C)

2.1

±0.1

Grenzwerte (T

A

= 25°C)

BC846W

BC847W

45 V

50 V

6V

200 mW

1

)

100 mA

200 mA

-55...+150°C

-55…+150°C

BC848W

BC849W

30 V

5V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

Peak Emitter current – Emitter-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

E open

C open

V

CBO

V

CEO

V

EB0

P

tot

I

C

I

CM

I

BM

- I

EM

T

j

T

S

65 V

80 V

Characteristics (T

j

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

V

CE

= 5 V, I

C

= 10 µA

Group A

Group B

Group C

Group A

Group B

Group C

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

V

CEsat

V

CEsat

–

110

200

420

–

Kennwerte (T

j

= 25°C)

Typ.

90

150

270

180

290

520

90 mV

200 mV

Max.

–

220

450

800

250 mV

600 mV

V

CE

= 5 V, I

C

= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

1

2

Mounted on P.C. board with 3 mm

2

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

p

= 300 µs, duty cycle

≤

2% – Gemessen mit Impulsen t

p

= 300 µs, Schaltverhältnis

≤

2%

http://www.diotec.com/

1

BC846W Related Products

	BC846W	BC847W	BC848W	BC849W
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	DIOTEC	DIOTEC	DIOTEC	DIOTEC
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	65 V	45 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz

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