BC847 datasheet, PDF - EEWORLD Datasheet

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BC847: Description100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size96KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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BC847 Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	SOT-23, 3 PIN
state	CONSULT MFR
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.2500 W
Transistor type	Universal small signal
Minimum DC amplification factor	110
Rated crossover frequency	100 MHz

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BC846 ... BC850

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

3

1.3

±0.1

1.1

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Version 2006-06-02

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Type

Code

1

1.9

2

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

A

= 25°C)

2.5 max

Grenzwerte (T

A

= 25°C)

BC846

BC847

BC850

45 V

50 V

6V

250 mW

1

)

100 mA

200 mA

-55...+150°C

-55…+150°C

BC848

BC849

30 V

5V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

V

CEO

V

CBO

V

EB0

P

tot

I

C

I

CM

T

j

T

S

65 V

80 V

Characteristics (T

j

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

V

CE

= 5 V, I

C

= 10 µA

Group A

Group B

Group C

Group A

Group B

Group C

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

V

CEsat

V

CEsat

V

BEsat

V

BEsat

–

110

200

420

–

Kennwerte (T

j

= 25°C)

Typ.

90

150

270

180

290

520

90 mV

200 mV

700 mV

900 mV

Max.

–

220

450

800

250 mV

600 mV

–

V

CE

= 5 V, I

C

= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

1

2

Mounted on P.C. board with 3 mm

2

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

p

= 300 µs, duty cycle

≤

2% – Gemessen mit Impulsen t

p

= 300 µs, Schaltverhältnis

≤

2%

http://www.diotec.com/

1

BC847 Related Products

	BC847	BC846	BC846_07	BC849	BC848
Description	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN	NPN
Maximum collector current	0.1000 A	0.1000 A	0.1000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	45 V	65 V	65 V	65 V	30 V
Processing package description	SOT-23, 3 PIN	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	Surface mount, 3 PIN
state	CONSULT MFR	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
terminal coating	tin lead	tin	tin	tin	MATTE Tin
Terminal location	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single	single
Number of components	1	1	1	1	1
Transistor component materials	silicon	silicon	silicon	silicon	silicon
Maximum ambient power consumption	0.2500 W	0.2500 W	0.2500 W	0.2500 W	0.2500 W
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	110	110	110	110	110
Rated crossover frequency	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Lead-free	-	Yes	Yes	Yes	Yes
EU RoHS regulations	-	Yes	Yes	Yes	Yes
China RoHS regulations	-	Yes	Yes	Yes	-
transistor applications	-	switch	switch	switch	-

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