BC848S datasheet, PDF - EEWORLD Datasheet

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BC848S: Description100 mA, 65 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size96KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BC848S Overview

100 mA, 65 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
Objectid	1839354805
package instruction	,
Reach Compliance Code	compli
compound_id	161839633
Humidity sensitivity level	1

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BC846 ... BC850

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

1.3

±0.1

1.1

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Version 2006-06-02

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Type

Code

1.9

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

= 25°C)

2.5 max

Grenzwerte (T

= 25°C)

BC846

BC847

BC850

45 V

50 V

250 mW

)

100 mA

200 mA

-55...+150°C

-55…+150°C

BC848

BC849

30 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

CEO

CBO

EB0

tot

65 V

80 V

Characteristics (T

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

= 5 V, I

= 10 µA

Group A

Group B

Group C

Group A

Group B

Group C

CEsat

BEsat

–

110

200

420

–

Kennwerte (T

= 25°C)

Typ.

150

270

180

290

520

90 mV

200 mV

700 mV

900 mV

Max.

–

220

450

800

250 mV

600 mV

–

= 5 V, I

= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung

)

= 10 mA, I

= 0.5 mA

= 100 mA, I

= 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung

)

= 10 mA, I

= 0.5 mA

= 100 mA, I

= 5 mA

Mounted on P.C. board with 3 mm

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

= 300 µs, duty cycle

≤

2% – Gemessen mit Impulsen t

= 300 µs, Schaltverhältnis

≤

http://www.diotec.com/

BC848S Related Products

	BC848S	BC846S_07	BC847S	BC849S
Description	100 mA, 65 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR	SMALL SIGNAL TRANSISTOR	100 mA, 65 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	DIOTEC	-	DIOTEC	DIOTEC
Reach Compliance Code	compli	-	compli	compli

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