BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
±0.1
1.1
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Version 2006-07-28
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
1.9
2
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
T
j
T
S
2.5 max
Grenzwerte (T
A
= 25°C)
BCW29
32 V
32 V
5V
250 mW
1
)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
BCW30
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 10 µA
- V
CE
= 5 V, - I
C
= 2 mA
BCW29
BCW30
BCW29
BCW30
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
–
–
120
215
–
–
Kennwerte (T
j
= 25°C)
Typ.
90
150
–
–
80 mV
150 mV
Max.
–
–
260
500
300 mV
–
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 50 mA, - I
B
= 2.5 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BCW29, BCW30
Characteristics (T
j
= 25°C)
Min.
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 50 mA, - I
B
= 2.5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- I
C
= 2 mA, - V
CE
= 5 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CE
= 30 V, T
j
= 100°C, (E open)
Emitter-Base cutoff current
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz,
Δf
= 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
F
R
thA
–
–
< 420 K/W
1
)
BCW31 ... BCW33
BCW29 = C1
BCW30 = C2
10 dB
C
CBO
–
4.5 pF
–
f
T
100 MHz
–
–
- I
EB0
–
–
100 nA
- I
CB0
- I
CB0
–
–
–
–
100 nA
10 µA
- V
BE
600 mV
–
750 mV
- V
BEsat
- V
BEsat
–
–
720 mV
810 mV
–
–
Kennwerte (T
j
= 25°C)
Typ.
Max.
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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