BCW60B datasheet, PDF - EEWORLD Datasheet

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BCW60B: Description100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size96KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BCW60B Overview

100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BCW60B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.55 V

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BCW60A ... BCW60D

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

1.3

±0.1

1.1

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Version 2006-07-31

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Type

Code

1.9

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

= 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

CEO

CBO

EB0

tot

2.5 max

Grenzwerte (T

= 25°C)

BCW60A ... BCW60D

32 V

250 mW

)

100 mA

200 mA

-55...+150°C

-55…+150°C

Characteristics (T

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

= 5 V, I

= 10 µA

Kennwerte (T

= 25°C)

Typ.

140

200

300

460

170

250

350

500

–

Max.

–

220

310

460

630

–

BCW60A

BCW60B

BCW60C

BCW60D

BCW60A

BCW60B

BCW60C

BCW60D

BCW60A

BCW60B

BCW60C

BCW60D

100

120

180

250

380

100

= 5 V, I

= 2 mA

= 1 V, I

= 50 mA

Mounted on P.C. board with 3 mm

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

= 300 µs, duty cycle

≤

2% – Gemessen mit Impulsen t

= 300 µs, Schaltverhältnis

≤

http://www.diotec.com/

BCW60B Related Products

	BCW60B	BCW60A	BCW60C	BCW60D
Description	100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	RF SMALL SIGNAL TRANSISTOR
Maker	DIOTEC	DIOTEC	DIOTEC	DIOTEC
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli	compli
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	50	90	100
JEDEC-95 code	TO-236	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	0.25 W
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	0.55 V	0.55 V	0.55 V	0.55 V
Is it Rohs certified?	conform to	-	conform to	conform to
Humidity sensitivity level	1	-	1	1

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