BCW66F ... BCW66H
BCW66F ... BCW66H
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
±0.1
1.1
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Version 2006-07-31
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
1.9
2
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CEO
V
CBO
V
EB0
P
tot
I
C
I
CM
I
BM
T
j
T
S
2.5 max
Grenzwerte (T
A
= 25°C)
BCW66F ... BCW66H
45 V
75 V
5V
250 mW
1
)
800 mA
1000 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 10 V, I
C
= 100 µA
2)
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
160
250
350
35
60
100
Max.
–
–
–
–
–
–
250
400
630
–
–
–
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
35
50
80
75
100
180
100
160
250
–
–
–
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 2 V, I
C
= 500 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BCW66F ... BCW66H
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 45 V, (E open)
V
CE
= 45 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current
V
EB
= 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
C
EBO
R
thA
–
60 pF
< 420 K/W
1
)
BCW68F ... BCW68H
BCW66F = EF
BCW66G = EG
BCW66H = EH
–
C
CBO
–
6 pF
–
f
T
–
170 MHz
–
I
EB0
–
–
20 nA
I
CB0
I
CB0
–
–
–
–
20 nA
20 µA
V
BEsat
V
BEsat
–
–
–
–
1.25 V
2.0 V
V
CEsat
V
CEsat
–
–
–
–
300 mV
700 mV
Kennwerte (T
j
= 25°C)
Typ.
Max.
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
Microcontroller MCU
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