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IRFU3707Z

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size531KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFU3707Z Overview

HEXFET Power MOSFET

IRFU3707Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)42 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)56 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)220 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
 
IRFR3707ZPbF
IRFU3707ZPbF
HEXFET
®
Power MOSFET
 
V
DSS
R
DS(on)
max
Qg
D
D
Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
30V
9.5m
9.6nC
S
G
G
S
D
Benefits
Very Low R
DS(on)
at 4.5V V
GS
Ultra - Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free
D- Pak
IRFR3707ZPbF
I- Pak
IRFU3707ZPbF
G
Gate
D
Drain
S
Source
Base part number
IRFU3707ZPbF
IRFR3707ZPbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU3707ZPbF
IRFR3707ZPbF
IRFR3707ZTRLPbF
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain -to-Source Voltage
Gate-to-Source Voltage
Parameter
Max.
30
± 20
56
39
220
50
25
0.33
-55 to + 175
300
 
Units
V
V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
 
A
 
W
W
W/°C
°C 
 
Thermal Resistance
 
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient ( PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Typ.
–––
–––
–––
Max.
3.0
50
110
Units
°C/W
Notes
through
are on page 2.
1
2016-5-31

IRFU3707Z Related Products

IRFU3707Z IRFR3707Z
Description HEXFET Power MOSFET HEXFET Power MOSFET
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-251AA TO-252AA
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 42 mJ 42 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 56 A 56 A
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.0095 Ω 0.0095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 245
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W
Maximum pulsed drain current (IDM) 220 A 220 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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Index Files: 2188  1236  2808  919  1992  45  25  57  19  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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