PNP General Purpose Amplifier
June 2007
BSR18B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
Sourced from Process 23.
3
Marking
2
1
T93
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J,
T
STG
NOTES:
* T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature, Storage Temperature
Value
40
40
5.0
200
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JA
Total Device Dissipation
Derate above 25℃
* T
a
= 25°C unless otherwise noted
Characteristic
Max
230
1.84
550
Units
mW
mW/℃
℃/W
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
Rev. A
BSR18B PNP General Purpose Amplifier
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
* T
a
= 25°C unless otherwise noted
Parameter
Test Condition
MIN
MAX
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μA,
I
E
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 30 V
V
CE
= 30 V, V
EB
= 3.0 V
40
40
5.0
50
50
V
V
V
nA
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
60
80
110
60
30
220
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
Emitter-Base Breakdown Voltage
*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.25
0.4
0.85
0.95
V
V
V
V
Small Signal Characteristics
C
cb
C
eb
Collector-Base Capacitance
Emitter-Base Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
4.5
10
pF
pF
Switching Characteristics
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 10 mA, I
B
on
= I
B
off
= 1.0 mA
V
cc
= 3.0 V
I
C
= 10 mA, I
B
1
= 1.0 mA,V
cc
= 3.0 V
35
35
225
75
ns
pF
ns
ns
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Performance Characteristics
2
BSR18B Rev. A
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BSR18B PNP General Purpose Amplifier
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I23
4
BSR18B Rev. A
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Embedded System
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