DN2540N3-G datasheet, PDF - EEWORLD Datasheet

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DN2540N3-G: Description120 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; Categorysemiconductor Discrete semiconductor; File Size813KB，8 Pages; ManufacturerSUTEX; Websitehttp://www.supertex.com/

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DN2540N3-G Overview

120 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

DN2540N3-G Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	400 V
Processing package description	GREEN PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	DEPLETION
Transistor type	Universal small signal
Maximum leakage current	0.1200 A
feedback capacitor	5 pF
Maximum drain on-resistance	25 ohm

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DN2540

N-Channel Depletion-Mode

Vertical DMOS FETs

Features

►

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

General Description

The Supertex DN2540 is a low threshold depletion mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Applications

►

Normally-on switches

Solid state relays

Converters

Linear ampliﬁers

Constant current sources

Power supply circuits

Telecom

Ordering Information

Device

DN2540

Package Options

TO-92

DN2540N3-G

TO-220

DN2540N5-G

TO-243AA

(1)

DN2540N8-G

DSX

/BV

DGX

(V)

DS(ON)

max

(Ω)

DSS

min

(mA)

400

150

-G indicates package is RoHS compliant (‘Green’)

(1) Same as SOT-89.

Pin Conﬁgurations

DRAIN

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

Soldering temperature*

Value

DSX

DGX

±20V

-55

C to +150

300

DRAIN

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

3-Lead TO-92 (N3)

GATE

DRAIN

SOURCE

3-Lead TO-220 (N5)

Absolute Maximum Ratings are those values beyond which damage to the

device may occur. Functional operation under these conditions is not implied.

Continuous operation of the device at the absolute rating level may affect

device reliability. All voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

3-Lead TO-243AA (N8)

DN2540N3-G Related Products

	DN2540N3-G	DN2540N5-G	DN2540	DN2540_07	DN2540N8-G
Description	120 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	0.17 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
Number of terminals	3	3	3	3	3
Processing package description	GREEN PACKAGE-3	GREEN, TO-220, N5, 3 PIN	GREEN, TO-220, N5, 3 PIN	GREEN, TO-220, N5, 3 PIN	GREEN, N8, SAME AS SOT-89, 3 PIN
Lead-free	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	RECTANGULAR	RECTANGULAR	RECTANGULAR	Rectangle
Package Size	cylindrical	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE
Terminal form	Wire	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	FLAT
terminal coating	MATTE Tin	MATTE TIN	MATTE TIN	MATTE TIN	MATTE Tin
Terminal location	BOTTOM	SINGLE	SINGLE	SINGLE	single
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single WITH BUILT-IN diode
Number of components	1	1	1	1	1
transistor applications	switch	SWITCHING	SWITCHING	SWITCHING	switch
Transistor component materials	silicon	SILICON	SILICON	SILICON	silicon
Channel type	N channel	N-CHANNEL	N-CHANNEL	N-CHANNEL	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	DEPLETION	DEPLETION	DEPLETION	DEPLETION	DEPLETION
Transistor type	Universal small signal	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	universal power supply
Maximum leakage current	0.1200 A	0.5000 A	0.5000 A	0.5000 A	0.1700 A
Maximum drain on-resistance	25 ohm	25 ohm	25 ohm	25 ohm	25 ohm
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN
Maximum leakage current pulse	-	0.5000 A	0.5000 A	0.5000 A	0.5000 A

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