DN3145
N-Channel Depletion-Mode Vertical DMOS FETs
Features
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High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
The Supertex DN3145 is a depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Normally-on switches
Solid state relays
Converters
Constant current sources
Power supply circuits
Telecom
Ordering Information
BV
DSX
/
BV
DGX
450V
R
DS(ON)
(max)
(min)
I
DSS
Package Options
TO-243AA
1
DN3145N8
DN3145N8-G
60Ω
120mA
-G indicates package is RoHS compliant (‘Green’)
Notes:
1
Same as SOT-89.
Product marking for TO-243AA:
DN1M
where
= 2-week alpha date code
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Pin Configuration
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
G
D
S
TO-243AA
(top view)
DN3145
Thermal Characteristics
Package
TO-243AA
I
D
(continuous)
1
100mA
I
D
(pulsed)
300mA
Power Dissipation
@T
A
= 25
O
C
1.3W
2
Θ
jc
(
O
C/W)
34
Θ
ja
(
O
C/W)
97
2
I
DR1
100mA
I
DRM
300mA
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@25 C unless otherwise specified)
O
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
450
-1.5
-
-
-
-
120
-
-
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
-
-3.5
4.5
100
1.0
1.0
-
60
1.1
-
120
15
10
10
15
20
35
1.8
-
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 15V, I
D
= 10µA
V
DS
= 15V, I
D
= 10µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -5.0V
V
DS
= 0.8 Max Rating,
V
GS
= -5.0V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 100mA
V
GS
= 0V, I
D
= 100mA
V
DS
= 10V, I
D
= 100mA
V
GS
= -5.0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 100mA,
R
GEN
= 25Ω,
V
GS
= -5.0V, I
SD
= 100mA
V
GS
= -5.0V, I
SD
= 100mA
ns
V
ns
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
R
L
OUTPUT
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
DN3145
3-Lead TO-243AA (SOT-89) Surface Mount Package (N8)
4.50 ± 0.10
1.72 ± 0.10
0.40 ± 0.05
Exclusion Zone
1.50 ± 0.10
4.10 ± 0.15
2.45 ± 0.15
2.21 ± 0.08
No Vias/Traces in
this area. Shape
of pad may vary.
1.05 ± 0.15
0.42 ± 0.06
1.50 BSC
3.00 BSC
0.5 ± 0.06
Top View
Side View
Bottom View
Notes:
All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Doc.# DSFP-DN3145
A012307
3
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