DN3525
N-Channel Depletion-Mode Vertical DMOS FETs
Features
►
►
►
►
►
►
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
Normally-on switches
Solid state relays
Converters
Constant current sources
Power supply circuits
Telecom
Product marking for TO-243AA:
DN5C
where
= 2-week alpha date code
Ordering Information
BV
DSX
/
BV
DGX
250V
R
DS(ON)
(max)
(min)
I
DSS
Package Options
TO-243AA
1
DN3525N8
DN3525N8-G
6.0Ω
300mA
-G indicates package is RoHS compliant (‘Green’)
Notes:
1
Same as SOT-89.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Pin Configuration
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
G
D
S
TO-243AA
(top view)
DN3525
Thermal Characteristics
Package
TO-243AA
I
D
(continuous)
1
360mA
I
D
(pulsed)
1.0A
Power Dissipation
@T
A
= 25
O
C
1.6W
2
Θ
jc
(
O
C/W)
15
Θ
ja
(
O
C/W)
78
2
I
DR1
360mA
I
DRM
1.0A
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@25 C unless otherwise specified)
O
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
250
-1.5
-
-
-
-
300
-
-
225
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
270
20
5.0
-
-
-
-
-
800
-
-3.5
4.5
100
1.0
1.0
-
6.0
1.1
-
350
60
20
20
25
25
40
1.8
-
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 15V, I
D
= 1.0mA
V
DS
= 15V, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -5.0V
V
DS
= 0.8 Max Rating,
V
GS
= -5.0V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 200mA
V
GS
= 0V, I
D
= 200mA
V
DS
= 10V, I
D
= 150mA
V
GS
= -5.0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
ns
V
ns
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
R
L
OUTPUT
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
DN3525
Typical Performance Curves
Output Characteristics
1.4
V
GS
=+2V
V
GS
=0V
1.4
Saturation Characteristics
1.2
1.2
V
GS
= +2V
0V
I
D
(Amperes)
0.8
V
GS
=-0.5V
V
GS
=-0.8V
V
GS
=-1V
I
D
(Amperes)
1.0
1.0
0.8
-0.5V
-0.8V
-1V
0.6
0.6
0.4
V
GS
=-1.5V
0.2
V
GS
=-2V
0.0
0
50
100
150
200
250
0.4
-1.5V
-2V
0
2
4
6
8
10
0.2
0.0
V
DS
(Volts)
Transconductance vs. Drain Current
1.0
V
DS
=10V
0.8
T
A
=-55 C
TO-243AA
1.6
O
V
DS
(Volts)
Power Dissipation vs. Ambient Temperature
2.0
G
FS
(Siemens)
0.6
T
A
=125 C
0.4
O
PD (Watts)
1.0
T
A
=25 C
O
1.2
0.8
0.2
0.4
0.0
0.0
0.0
0.2
0.4
0.6
0.8
0
25
50
75
100
125
150
I
D
(Milliamperes)
Maximum Rated Safe Operating Area
10
1.0
T
A
(
O
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
T
A
=25 C
TO-243AA (Pulsed)
1.0
O
0.8
I
D
(Amperes)
TO-243AA (DC)
0.6
0.1
0.4
TO-243AA
T
A
= 25 C
O
P
D
= 1.6W
0.01
0.2
0.001
1
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(Volts)
t
p
(seconds)
3
DN3525
Typical Performance Curves
1.2
I
D
= 100A
V
GS
= -5V
(cont.)
On Resistance vs. Drain Current
25
T
J
= 25 C
20
O
BV
DSV
Variation with Temperature
BV
DSV
(Normalized)
R
DS(ON)
(ohms)
1.1
V
GS
= 0V
15
1.0
10
0.9
5
0.8
-50
0
50
100
150
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
( C)
O
I
D
(Amperes)
V
GS(OFF)
and R
DS(ON)
w/ Temperature
1.3
2.4
2.2
V
GS(OFF)
@ 1mA, 15V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125 150
O
Transfer Characteristics
2000
V
DS
= 10V
1600
T
A
= -55 C
1.2
V
GS(OFF)
(normalized)
I
D
(Milliamperes)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
T
A
= 25 C
1200
O
T
A
= 125 C
800
O
R
DS(on)
@ 0V, 200mA
400
0
-3
-2
-1
0
1
2
0.4
V
GS
(Volts)
Capacitance vs. Drain Source Voltage
350
V
GS
= -5V
300
T
J
( C)
O
Gate Drive Dynamic Characteristics
3
I
D
= 200mA
2
1
V
DS
=30V
C (picofarads)
250
V
GS
(volts)
0
-1
-2
-3
200
150
C
ISS
100
50
C
RSS
0
0
10
20
30
40
C
OSS
-4
-5
0
1000
2000
3000
4000
5000
V
DS
(volts)
Q
G
(picocoulombs)
4
R
DS(ON)
(normalized)
DN3525
3-Lead TO-243AA (SOT-89) Surface Mount Package (N8)
4.50 ± 0.10
1.72 ± 0.10
0.40 ± 0.05
Exclusion Zone
1.50 ± 0.10
4.10 ± 0.15
2.45 ± 0.15
2.21 ± 0.08
No Vias/Traces in
this area. Shape
of pad may vary.
1.05 ± 0.15
0.42 ± 0.06
1.50 BSC
3.00 BSC
0.5 ± 0.06
Top View
Side View
Bottom View
Notes:
All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Doc.# DSFP-DN3525
A012307
5
京公网安备 11010802033920号
EEWORLD
