HV2116X datasheet, PDF - EEWORLD Datasheet

HV2116

8-Channel High Voltage Analog Switch

Ordering Information

Package Options

V

PP

– V

NN

160V

28-lead plastic

chip carrier

HV2116PJ

Die

HV2116X

Features

TE –

SOLE

Description

General

– OB

Not recommended for new designs. Please use HV202

instead.

This device is an 8-channel high-voltage analog switch integrated

circuit (IC) intended for use in applications requiring high voltage

switching controlled by low voltage control signals, such as ultra-

sound imaging and printers. Input data is shifted into an 8-bit shift

register which can then be retained in an 8-bit latch. To reduce

any possible clock feedthrough noise, Latch Enable (LE) should

be left high until all bits are clocked in. Using HVCMOS technol-

ogy, this switch combines high voltage bilateral DMOS switches

and low power CMOS logic to provide efficient control of high

voltage analog signals.

This IC is suitable for various combinations of high voltage sup-

plies, e.g., for HV2116 +40V/-120V, or +80V/-80V or +150V/-10V.

■

HVCMOS

®

technology for high performance

■

Very low quiescent power dissipation – 10µA

■

Output On-resistance typically 22 ohms

■

Low parasitic capacitances

■

DC to 10MHz analog signal frequency

■

-50dB typical output off isolation at 5MHz

■

CMOS logic circuitry for low power

■

Excellent noise immunity

■

On-chip shift register, and latch logic circuitry

■

Flexible high voltage supplies

■

Surface mount package available

13

1

Absolute Maximum Ratings*

V

DD

logic power supply voltage

V

PP

- V

NN

supply voltage

V

PP

positive high voltage supply

V

NN

Negative high voltage supply

Logic input voltages

Analog signal range

Peak analog signal current/channel

Storage temperature

Power dissipation

-0.5V to +18V

174V

-0.5V to +160V

+0.5V to -160V

-0.5V to V

DD

+0.3V

V

NN

to V

PP

3.0A

-65°C to +150°C

1.2W

*Absolute Maximum Ratings are those values beyond which damage to the

device may occur. Functional operation under these conditions is not implied.

Continuous operation of the device at the absolute rating level may affect

device reliability.

13-57

Electrical Characteristics

Characteristics

Sym

DC Characteristics

(over recommended operating conditions unless otherwise noted)

0

°

C

min

max

30

25

Small Signal Switch (ON)

Resistance

R

ONS

25

18

23

22

Small Signal Switch (ON)

Resistance Matching

Large Signal Switch (ON)

Resistance

Switch Off Leakage

Per Switch

DC Offset Switch Off

DC Offset Switch On

Pos. HV Supply Current

Neg. HV Supply Current

Pos. HV Supply Current

Neg. HV Supply Current

Switch Output

Peak Current

Output Switch Frequency

f

SW

6.5

I

PP

Supply Current

I

PP

4.0

6.5

I

NN

Supply Current

I

NN

4.0

Logic Supply

Average Current

Logic Supply

Quiescent Current

Data Out Source Current

Data Out Sink Current

I

DD

I

DDQ

I

SOR

I

SINK

0.45

6.0

10

0.45

0.70

4.0

I

PPQ

I

NNQ

I

PPQ

I

NNQ

3.0

∆R

ONS

R

ONL

I

SOL

5.0

300

500

20

min

+25

°

C

typ

26

22

18

20

16

5.0

13

1.0

100

10

-10

10

-10

3.0

max

32

27

20

25

20

22

10

300

500

50

-50

50

-50

2.0

50

7.0

5.0

7.0

5.0

6.0

10

0.40

8.0

5.5

8.0

5.5

6.0

10

2.0

15

300

500

+70

°

C

min max

35

32

30

23

30

27

20

ETE –

SOL

– OB

Units

Test Conditions

I

SIG

= 5mA

ohms

I

SIG

= 5mA

I

SIG

= 5mA

%

ohms

µA

mV

µA

A

KHz

HV2116

V

PP

= 40V,

V

PP

= 80V,

V

PP

= 150V,

I

SIG

= 200mA V

NN

= –120V

I

SIG

= 200mA V

NN

= –80V

I

SIG

= 200mA V

NN

= –10V

I

SW

= 5mA, V

PP

= 80V,

V

NN

= –80V

V

SIG

= V

PP

–10V, I

SIG

= 1A

V

SIG

= V

PP

–10V

and V

NN

+10V

R

L

= 100KΩ

R

L

= 100KΩ

ALL SWS OFF

ALL SWS ON I

SW

= 5mA

ALL SWS ON I

SW

= 5mA

V

SIG

≤

0.1% duty cycle

Duty Cycle = 50%

V

PP

= 40V,

V

NN

= –120V

mA

V

PP

= 80V,

V

NN

= –80V

V

PP

= 150V,

V

NN

= –10V

V

PP

= 40V,

V

NN

= –120V

mA

V

PP

= 80V,

V

NN

= –80V

V

PP

= 150V,

V

NN

= –10V

mA

µA

mA

V

OUT

= V

DD

- 0.7V

V

OUT

= 0.7V

f

CLK

= 3MHz,

50KHz

Output

Switching

Frequency

with no

load

13-58

Electrical Characteristics

AC Characteristics

(over operating conditions V

DD

= 15V, unless otherwise noted)

Characteristics

Time to Turn Off V

SIG

*

Set Up Time Before LE Rises

Time Width of LE

Clock Delay Time to Data Out

Set Up Time Data to Clock

Hold Time Data from Clock

Clock Freq

Turn On Time

Turn Off Time

Sym

t

SIG(OFF)

t

SD

t

WLE

t

DO

t

SU

t

h

f

CLK

15

35

3.0

2.0

3.0

10

Maximum V

SIG

Slew Rate

dv/dt

10

Off Isolation

KO

-30

-45

Switch Crosstalk

Output Switch Isolation

Diode Current

Off Capacitance SW to GND

On Capacitance SW to GND

K

CR

I

ID

C

SG(OFF)

C

SG(ON)

5.0

25

-60

300

17

50

5.0

25

12

38

-30

-45

-60

-33

-50

-70

300

17

50

5.0

25

150

300

15

35

3.0

2.0

3.0

10

-30

-45

-60

0

°

C

min

max

min

200

150

8.0

330

20

35

150

+25

°

C

typ

max

min

ETE –

SOL

– OB

+70

°

C

max

Units

ns

350

ns

3.0

2.0

3.0

10

dB

300

17

50

mA

pF

V/ns

MHz

µs

HV2116

Test Conditions

50% duty cycle

f

DATA

= f

CLK

/2

V

SIG

= V

PP

-10V,

R

L

= 10KΩ

V

SIG

= V

PP

-10V,

R

L

= 10KΩ

V

PP

= 150V,

V

NN

= -10V

V

PP

= 80V,

V

NN

= -80V

V

PP

= 40V,

V

NN

= -120V

f = 5MHz,

1KΩ//15pF load

f = 5MHz,

50Ω load

f = 5MHz,

50Ω load

300ns pulse width,

2.0% duty cycle

0V, 1MHz

*Time required for analog signal to turn off before output switch turns off (critical timing).

13

1

13-59

HV2116

Electrical Characteristics

AC Characteristics

(over operating conditions V

DD

= 15V, unless otherwise noted)

Characteristics

Sym

+V

SPK

-V

SPK

Output Voltage Spike

+V

SPK

-V

SPK

+V

SPK

-V

SPK

Charge Injection

Q

+25

°

C

min

typ

1.0

3.5

12

18

6.0

9.0

1700

850

600

pC

V

max

Units

Test Conditions

V

PP

= 40V, V

NN

= -120V

R

L

= 50Ω

V

PP

= 80V, V

NN

= -80V

R

L

= 50Ω

V

PP

= 150V, V

NN

= -10V

R

L

= 50Ω

V

PP

= 80V, V

NN

= -80V, V

SIG

= 0V

V

PP

= 80V, V

NN

= -80V, V

SIG

= 70V

V

PP

= 80V, V

NN

= -80V, V

SIG

= -70V

TE –

OLE

– OBS

Operating Conditions

Symbol

V

DD

V

PP

V

NN

V

IH

V

IL

V

SIG

T

A

Parameter

Logic power supply voltage

1, 3

Positive high voltage supply

1, 3

Negative high voltage supply

1, 3

High-level input voltage

Low-level input voltage

Analog signal voltage peak to peak

2

Operating free air-temperature

Value

10.0 V to 15.5 V

40V to V

NN

+ 160V

-10.0V to -120V

V

DD

-2V to V

DD

0V to 2.0V

V

NN

+10V to V

PP

-10

0°C to 70°C

Notes:

1 Power up/down sequence is arbitrary except GND must be powered-up first and powered-down last.

2 V

SIG

must be V

NN

≤

V

SIG

≤

V

PP

or floating during power up/down transistion.

3 Rise and fall times of power supplies V

DD

, V

PP

, and V

NN

should not be less than 1.0msec.

13-60

HV2116

Test Circuits

V

PP

–10V

V

PP

–10

I

SOL

V

IN

= 10 V

P–P

@5MHz

50Ω

NC

R

L

V

OUT

10KΩ

V

NN

+10

50Ω

V

PP

V

NN

V

PP

V

NN

V

DD

GND

15V

V

PP

V

NN

V

PP

V

NN

V

DD

GND

15V

V

PP

V

NN

V

PP

V

NN

V

DD

GND

15V

K

CR

= 20Log

V

OUT

V

IN

Switch OFF Leakage

V

IN

= 10 V

P–P

@5MHz

TE –

SOLE

– OB

V

OUT

V

SIG

I

ID

100KΩ

R

L

15V

Crosstalk

T

ON

/T

OFF

Test Circuit

V

OUT

R

L

V

NN

V

PP

V

NN

V

PP

V

NN

V

DD

GND

V

PP

V

NN

V

PP

V

NN

V

DD

GND

15V

V

PP

V

NN

V

PP

V

NN

V

DD

GND

+15V

K

O

= 20Log

V

OUT

V

IN

OFF Isolation

DC Offset ON/OFF

Isolation Diode Current

∆V

OUT

V

OUT

1000pF

+V

SPK

V

OUT

–V

SPK

50Ω

13

1

R

L

V

SIG

1KΩ

+80V

–80V

V

PP

V

NN

V

DD

GND

+15V

V

PP

V

NN

V

PP

V

NN

V

DD

GND

15V

Q = 1000pF x

∆V

OUT

Charge Injection

Output Voltage Spike

13-61

HV2116X

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