AF1332N
N-Channel Enhancement Mode Power MOSFET
Features
- Simple Gate Drive
- 2KV ESD Rating (Per MIL-STD-883D)
- Small Package Outline (SOT323)
Description
The advanced power MOSFET provides the designer
with the best combination of fast switching, low
on-resistance and cost-effectiveness.
Product Summary
BV
DSS
= 20V
R
DS (on)
= 600mΩ.
I
D
= 600mA
Pin Assignments
3
(Top View)
1. G
2. S
3. D
Pin Descriptions
Pin
No.
1
2
3
Pin
Name
G
S
D
Description
Gate
Source
Drain
1
2
Ordering information
A X 1332N X X X
Feature
F :MOSFET
PN
Package
U: SOT323
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 15, 2004
1/5
AF1332N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
20
±6
600
470
2.5
0.35
0.003
-55 to +150
-55 to +150
Unit
V
V
mA
A
W
W/
o
C
o
C
o
C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
Max.
Value
360
Unit
ºC/W
Electrical Characteristics
at T
A
=25
o
C (unless otherwise specified)
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=4.5V, I
D
=600mA
V
GS
=2.5V, I
D
=400mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=600mA
V
DS
=20V, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=±6V
I
D
=600mA,
V
DS
=16V,
V
GS
=4.5V
V
DS
=10V,
I
D
=600mA,
R
G
=3.3Ω, V
GS
=5V
R
D
=16.7Ω
V
GS
=0V,
V
DS
=10V,
f=1.0MHz
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.02
-
-
-
1
-
-
-
1.3
0.3
0.5
21
53
100
125
38
17
12
Max.
-
-
600
850
1.2
-
1
uA
10
±10
2
-
-
-
-
-
-
60
-
-
uA
nC
Unit
V
V/ C
mΩ
V
S
o
ns
pF
Source-Drain Diode
Symbol
V
DS
Parameter
Forward On Voltage
(Note 3)
Test Conditions
I
S
=300mA, V
GS
=0V
Min.
-
Typ.
-
Max.
1.2
Unit
V
Note 1:
Surface mounted on FR4 board, t
≤
10 sec.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Oct 15, 2004
AF1332N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
Anachip Corp.
www.anachip.com.tw
3/5
Rev. 1.0
Oct 15, 2004
AF1332N
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
4/5
Rev. 1.0
Oct 15, 2004
AF1332N
N-Channel Enhancement Mode Power MOSFET
Marking Information
(Top View)
SOT323
Part Number:
AF1332N
A~Z: Week: 27~52
or Lot No: 1~9
A~Z: Week: 01~26
or Lot No: 1~9
X X: Year: 4 years in one cycle
X X: 2004, 2008, 2012...
X X: 2005, 2009, 2013...
X X: 2006, 2010, 2014...
X X: 2007, 2011, 2015...
2 XX
Package Information
Package Type: SOT323
D
D1
E1
E
e
*Dimension does not include mold protrusions.
Symbol
A
A1
D
D1
E
E1
e
Dimensions In Millimeters
Min.
0.90
0.03
1.90
0.20
2.00
1.15
Nom.
1.00
0.07
2.00
0.30
2.10
1.25
1.30 Bsc.
Max.
1.10
0.10
2.10
0.40
2.20
1.35
Dimensions In Inches
Min.
0.035
0.001
0.075
0.008
0.079
0.045
Nom.
0.039
0.003
0.079
0.012
0.083
0.049
0.051 Bsc.
Max.
0.043
0.004
0.083
0.016
0.087
0.053
Anachip Corp.
www.anachip.com.tw
5/5
A1
Rev. 1.0
A
Oct 15, 2004
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