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71V3577S85PFGI

Description
TQFP-100, Tray
Categorystorage   
File Size420KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
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71V3577S85PFGI Overview

TQFP-100, Tray

71V3577S85PFGI Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeTQFP
package instructionQFP, QFP100,.63X.87
Contacts100
Manufacturer packaging codePKG100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Samacsys DescriptionTQFP 14.0 X 20.0 X 1.4 MM
Maximum access time8.5 ns
Other featuresFLOW THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)87 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density4718592 bit
Memory IC TypeCACHE SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.035 A
Minimum standby current3.14 V
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm
Base Number Matches1
128K X 36, 256K X 18
3.3V Synchronous SRAMs
3.3V I/O, Flow-Through Outputs
Burst Counter, Single Cycle Deselect
Features
IDT71V3577S
IDT71V3579S
IDT71V3577SA
IDT71V3579SA
Description
The IDT71V3577/79 are high-speed SRAMs organized as
128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
address and control registers. There are no registers in the data output
path (flow-through architecture). Internal logic allows the SRAM to gen-
erate a self-timed write based upon a decision which can be left until the
end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V3577/79 can provide four cycles of data
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the
LBO
input pin.
The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Synchronous
Synchronous
N/A
Synchronous
Asynchronous
Asynchronous
Synchronous
N/A
N/A
128K x 36, 256K x 18 memory configurations
Supports fast access times:
Commercial:
– 6.5ns up to 133MHz clock frequency (TQFP package only)
Commercial and Industrial:
– 7.5ns up to 117MHz clock frequency
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Pin Description Summary
A
0
-A
17
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V3579.
APRIL 2012
1
DSC-6450/1
6450tbl 01
©2012 Integrated Device Technology, Inc.
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