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P6SMBJ10

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size228KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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P6SMBJ10 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

P6SMBJ10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-214AA
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage13.5 V
Minimum breakdown voltage11.1 V
Breakdown voltage nominal value12.3 V
Maximum clamping voltage18.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P6 SMBJ 6,5 ... P6 SMBJ 130CA
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Surface mount diode
Unidirectional and
bidirectional Transient
Voltage Suppressor
diodes
P6 SMBJ 6,5...P6 SMBJ 130CA
Pulse Power
Dissipation: 600 W
Maximum Stand-off
voltage: 6,5...130 V
Features
Mechanical Data
1)
2)
3)
1
09-03-2007 MAM
© by SEMIKRON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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