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P6503NJG

Description
N- & P-Channel Enhancement Mode Field Effect Transistor
File Size238KB,8 Pages
ManufacturerETC
Download Datasheet View All

P6503NJG Overview

N- & P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
N-Channel
P-Channel
30
-30
R
DS(ON)
65mΩ
150mΩ
I
D
4A
-3A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Junction & Storage Temperature Range
Lead Temperature ( /
16
” from case for 10 sec.)
1
SYMBOL
V
DS
V
GS
N-Channel P-Channel
30
±20
4
3
-30
±20
-3
-2
-10
2
1.3
UNITS
V
V
T
C
= 25 °C
T
C
= 70 °C
I
D
I
DM
A
10
T
C
= 25 °C
T
C
= 70 °C
P
D
T
j
, T
stg
T
L
W
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
SYMBOL
R
θJA
TYPICAL
MAXIMUM
110
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle
1%
1
Mar-18-2005
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