2N6193
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N6193J)
•
JANTX level (2N6193JX)
•
JANTXV level (2N6193JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching transistor
•
Low power
•
PNP silicon transistor
Features
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 9700
Reference document:
MIL-PRF-19500/561
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
100
100
6
5
1
5.71
17.5
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
°C/W
°C
R
θJC
T
J
T
STG
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N6193
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 0.5 A, V
CE
= 2 Volts
I
C
= 2 A, V
CE
= 2 Volts
I
C
= 5 A, V
CE
= 2 Volts
I
C
= 2 A, V
CE
= 2 Volts
T
A
= -55°C
I
C
= 2 A, I
B
= 200 mA
I
C
= 5 A, I
B
= 500 mA
I
C
= 2 A, I
B
= 200 mA
I
C
= 5 A, I
B
= 500 mA
Symbol
V
(BR)CEO
I
CBO1
I
CEO
I
CEX1
I
CEX2
I
EBO1
Test Conditions
I
C
= 50 mA
V
CB
= 100 Volts
V
CE
= 100 Volts
V
CE
= 90Volts, V
BE
= 1.5Volts
V
CE
=90Volts, V
BE
= 1.5Volts,
T
A
= 150°C
V
EB
= 6 Volts
Min
100
10
100
10
1
100
Typ
Max
Units
Volts
µA
µA
µA
mA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
60
60
40
12
Typ
Max
240
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
1.2
1.8
0.7
1.2
Volts
Volts
Symbol
|h
FE
|
C
OBO
C
IBO
t
d
t
r
t
s
t
f
Test Conditions
V
CE
= 10 Volts, I
C
= 500 mA,
f = 10 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 2 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
3
Typ
Max
15
300
1,250
Units
pF
pF
I
C
= 2 A, I
B1
= 200 mA
I
C
= 2 mA, I
B1
=I
B2
= 200 mA
100
100
2
200
ns
µs
ns
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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