2N6989
Silicon NPN Transistor
Data Sheet
Description
Complement to the 2N6987
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N6987J)
•
JANTX level (2N6987JX)
•
JANTXV level (2N6987JV)
•
JANS level (2N6987JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching
•
4 Transistor Array
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cerdip ceramic
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/559
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
T
STG
T
C
= 25°C unless otherwise specified
Rating
50
75
6
800
2
11.43
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
°C
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N6989
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55°C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 75 Volts
V
CB
= 60 Volts
V
CB
= 60 Volts, T
A
= 150°C
V
EB
= 6 Volts
V
EB
= 4 Volts
Min
50
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
50
75
100
100
30
35
0.6
Typ
Max
325
300
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Transistor to Transistor Resistance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
1.2
2.0
0.3
1.0
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
|R
T-T
|
t
ON
t
OFF
Test Conditions
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 2 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
|V
T-T
| = 500 Volts
Min
2.5
50
Typ
Max
10
Units
8
25
10
10
pF
pF
Ω
35
300
ns
ns
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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