KM416L16331AT-FY datasheet, PDF

KM416L16331AT-FY: DescriptionDDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66; Categorystorage storage; File Size744KB，49 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM416L16331AT-FY Overview

DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSSOP2
package instruction	TSOP2, TSSOP66,.46
Contacts	66
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
length	22.22 mm
memory density	268435456 bi
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	66
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.025 A
Maximum slew rate	0.2 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

256Mb DDR SDRAM

Target

DDR SDRAM Specification

Version 0.4

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REV. 0.4 July 1. '99

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