2N4957UB
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N4957UBJ)
•
JANTX level (2N4957UBJX)
•
JANTXV level (2N4957UBJV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
VHF-UHF amplifier transistor
•
PNP silicon transistor
Features
•
•
•
•
Hermetically sealed TO-72 metal can
Also available in chip configuration
Chip geometry 0006
Reference document:
MIL-PRF-19500/426
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
T
STG
Rating
30
30
3
30
200
1.14
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
°C
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4957UB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
Test Conditions
I
C
= 0.5 mA, V
CE
= 10 Volts
I
C
= 2 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
I
C
= 5 mA, V
CE
= 10 Volts
T
A
= -55°C
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
Test Conditions
I
C
= 1 mA
V
CB
= 20 Volts
V
CB
= 30 Volts
V
CB
= 20 Volts, T
A
= 150°C
V
EB
= 3 Volts
Min
30
100
100
100
100
Typ
Max
Units
Volts
nA
µA
µA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
15
20
30
10
Typ
Max
Units
165
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Common-Emitter small signal power
gain
Noise Figure
Collector Base time constant
Collector Base feedback capacitance
Symbol
|h
FE
|
G
PE
NF
r
b
’C
C
C
cb
Test Conditions
V
CE
= 10 Volts, I
C
= 2 mA,
f = 100 MHz
I
C
= 2 mA, V
CE
= 10 Volts,
f = 450 MHz
V
CE
= 10 Volts, I
C
= 2 mA,
f = 450 MHz, R
L
= 50
Ω
V
CB
= 10 Volts, I
E
= 2 mA,
f = 63.6 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
12
17
Typ
Max
36
25
3.5
1
8
0.8
dB
dB
ps
pF
Units
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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