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BYZ35A27

Description
10000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size202KB,1 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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BYZ35A27 Overview

10000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BYZ35A27 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionO-MUPF-P1
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL CLASSIFICATION
Maximum breakdown voltage29 V
Minimum breakdown voltage25 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MUPF-P1
JESD-609 codee2
Maximum non-repetitive peak reverse power dissipation8000 W
Number of components1
Number of terminals1
Package body materialMETAL
Package shapeROUND
Package formPRESS FIT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formPIN/PEG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
BYZ 35A22 ... BYZ 35K39
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Silicon Press-fit
diodes
Silicon Protectifiers with
TVS characteristics
High-temperature diodes
BYZ 35A22 ...BYZ 35K39
Pulse Power
Dissipation: 8000 W
Maximum Stand-off
voltage: / V
Publish Data
Features
Mechanical Data
Dimensions in mm
1
10-04-2006 SCT
© by SEMIKRON
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