2N3507L
Silicon NPN Transistor
D a ta S h e e t
Description
SEMICOA offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3507LJ)
•
JANTX level (2N3507LJX)
•
JANTXV level (2N3507LJV)
•
JANS level (2N3507LJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching transistor
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
Rating
50
80
5
3
1
5.71
5
28.6
175
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
R
θJA
T
J
T
STG
Copyright© 2007
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3507L
Silicon NPN Transistor
D a ta S h e e t
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX1
I
CEX2
Test Conditions
I
C
= 100
µA
I
C
= 10 mA
I
E
= 10
µA
V
CE
= 60 Volts, V
EB
= 4 Volts
V
CE
= 60 Volts, V
EB
= 4 Volts,
T
A
= 150°C
Min
80
50
5
1
1.5
Typ
Max
Units
Volts
Volts
Volts
µA
mA
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
BEsat1
V
BEsat2
V
BEsat3
V
CEsat1
V
CEsat2
V
CEsat3
Test Conditions
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55°C
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
35
30
25
20
17
Typ
Max
175
150
Units
Base-Emitter Saturation Voltage
0.8
Collector-Emitter Saturation Voltage
1.0
1.3
2.0
0.5
1.0
1.5
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Delay Time
Rise Time
Symbol
|h
FE
|
C
OBO
C
IBO
t
d
t
r
Test Conditions
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 1.5 A, I
B1
= 150 mA
I
C
= 1.5 A, I
B1
= 150 mA
Min
3
Typ
Max
15
40
300
15
30
pF
pF
ns
ns
Units
Switching Characteristics
Storage Time
Fall Time
t
s
t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
55
35
ns
ns
Copyright© 2007
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
PCB Design
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