NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
D
PRODUCT SUMMARY
V
(BR)DSS
75
R
DS(ON)
13mΩ
I
D
80A
1. GATE
2. DRAIN
3. SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.55mH
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature ( /
16
” from case for 10 sec.)
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1
2
1
SYMBOL
V
GS
LIMITS
±20
80
55
250
40
400
20
192
76
-55 to 150
275
UNITS
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AR
E
AS
E
AR
P
D
T
j
, T
stg
T
L
A
mJ
W
°C
SYMBOL
R
θJC
R
θJA
R
θCS
TYPICAL
MAXIMUM
0.65
62.5
UNITS
°C / W
0.5
Pulse width limited by maximum junction temperature.
Duty cycle
≤
1％
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125 °C
75
1.5
2.3
4.0
±250
1
10
nA
µA
V
LIMITS
UNIT
MIN TYP MAX
1
Jun-09-2006
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
60
10.5
38
13
A
mΩ
S
On-State Drain Current
1
Drain-Source On-State
Resistance
1
Forward Transconductance
1
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
I
D(ON)
R
DS(ON)
g
fs
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 40A
V
DS
= 50V, I
D
= 40A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40V,
I
D
≅
40A, V
GS
= 10V, R
GS
= 2.5Ω
V
DS
=60V, V
GS
= 10V,
I
D
= 40A
V
GS
= 0V, V
DS
= 25V, f = 1MHz
3820
610
130
160
30
55
15
65
50
50
nS
nC
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
1
2
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, dl
F
/dt = 100A /
µS
I
F
= 40A, V
GS
= 0V
100
200
410
80
250
1.3
A
V
nS
A
nC
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2％.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P1308ATG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
Jun-09-2006
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
Typical Output Characteristics
1000
Typical Transfer Characteristics
1000
I
D
, Drain-to-Source Current(A)
V
DS
= 25V
I
D
, Drain-to-Source Current(A)
T
J
=25°C
8.0V
10V
7.0V
6.0V
5.5V
5.0V
100
100
V
GS
=4.5V
10
0.1
1
10
100
10
4.0
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Normalized On-Resistance Vs.Temperature
3.0
Capacitance-Characteristics
7000
6000
5000
4000
3000
Coss
2000
Crss
1000
0
1
10
100
R
DS(ON)
, Normalized
Drain-to-Source On Resistance
I
D
= 40A
V
GS
= 0V, f=1 MHZ
2.5
2.0
Ciss
1.5
1.0
0.5
V
GS
= 10V
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature(°C)
C, Capacitance(pF)
V
DS
, Drain-to-Source Voltage(V)
Typical Gate Charge
Vs.
Gate-to-Source Voltage
20
Typical Source-Drain Diode Forward Voltage
I
D
= 40A
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
1000
V
GS
, Gate-to-Source Voltage(V)
I
SD
, Rrverse Drain Current(A)
15
100
12
T
J
=150° C
10
8
T
J
=25° C
1
4
0
0
V
GS
= 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Q
G
, Total Gate Charge (nC)
40
80
120
160
V
SD
, Source-to-Drain Voltage(V)
3
Jun-09-2006
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
Maximum Safe Operating Area
1000
Transient Thermal Respence Curre
1
I
D
, Drain-to-Source Current(A)
r
(t)
, Normalized Effctive
Transient Thermal Resistance
OPERATION IN THIS AREA
LIMTED BY R
DS
(on)
D=0.5
100
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
Notes:
1.R
θ
JC
(t)=r(t)*R
2.R
θ
JC
=0.65°C/W
3.T
j
+Tc=P*R
θ
JC
(t)
4.Duty Cycle, D=t1/t2
0.001
P
(PK)
t1
t2
100
μ
sec
10
1msec
Tc=25° C
R
θ
JC
=0.65° C/W
Sing Pulse
10msec
100
1000
0.01
0.00001
0.0001
1
1
10
0.01
0.1
V
DS
, Drain-to-Source Voltage(V)
t
1
, Rectangular Pulse Duration(sec)
4
Jun-09-2006
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
TO-220 (3-Lead) MECHANICAL DATA
mm
Dimension
Min.
A
B
C
D
E
F
G
28.5
14.6
8.4
0.72
9.78
2.61
Typ.
10.16
2.74
20
28.9
15.0
8.8
0.8
29.3
15.4
9.2
0.88
Max.
10.54
2.87
H
I
J
K
L
M
N
Dimension
Min.
2.4
1.19
4.4
1.14
2.3
0.26
Typ.
2.54
1.27
4.6
1.27
2.6
0.46
7°
Max.
2.68
1.35
4.8
1.4
2.9
0.66
mm
5
Jun-09-2006
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