ML1490
RF/IF/Audio Amplifier
Wideband Amplifier With AGC
Legacy Device:
Motorola MC1490
The ML1490 is an integrated circuit featuring
wide–range AGC for use in RF/IF amplifiers and audio
amplifiers.
• High Power Gain:
50 dB Typ at 10 MHz
45 dB Typ at 60 MHz
35 dB Typ at 100 MHz
• Wide Range AGC: 60 dB Min, DC to 60 MHz
• 6.0 V to 15 V Operation, Single Polarity Supply
• Operating Temperature Range TA = –40° to +85°C
Note: See Similar ML1350 For Possible Option
MAXIMUM RATINGS
(TA = +25°C, unless otherwise noted.)
Rating
Power Supply Voltage
AGC Supply
Input Differential Voltage
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Symbol
VCC
VAGC
VID
TA
Tstg
TJ
Value
+18
VCC
5.0
–40 to +85
–65 to +150
+150
Unit
Vdc
Vdc
Vdc
°C
°C
°C
VCC
GND
2
– +
3
4
(Top View)
Output
(–)
1
8
Output
(+)
8
1
P DIP 8 = PP
PLASTIC PACKAGE
CASE 626
CROSS REFERENCE/ORDERING INFORMATION
PACKAGE
MOTOROLA
LANSDALE
P DIP 8
MC1490P
ML1490PP
Note:
Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from
ML
to
MLE.
PIN CONNECTIONS
7 Substrate
Ground
6
5
Noninverting
Input
AGC
Input
Representative Schematic Diagram
2
1.5 k
VAGC
5
470
2.0 k
470
70
5.5 k 12.1 k
8 (+)
Outputs
(–)
1
45
66
6
5.0 k
5.0 k
5.6 k
1.1 k 1.1 k
8.4 k
Substrate
1.9k
200
3
7
1.4 k
2.8 k
200 200 2.8 k
VCC
Inverting
Input
SCATTERING PARAMETERS
(VCC = +12 Vdc, TA = +25°C, Zo = 50
Ω)
f = MHz
Typ
Parameter
Input
Reflection
Coefficient
Output
Reflection
Coefficient
Forward
Transmission
Coefficient
Reverse
Transmission
Coefficient
Symbol
|S11|
θ11
|S22|
θ22
|S21|
θ21
S12
θ12
30
0.95
–7.3
0.99
–3.0
16.8
128
0.00048
84.9
60
0.93
–16
0.98
–5.5
14.7
64.3
0.00092
79.2
Unit
–
deg
–
deg
–
deg
–
deg
4
(–)
(+)
Inputs
Pins 3 and 7 should both be connected to circuit ground.
Page 1 of 8
www.lansdale.com
Issue A
ML1490
LANSDALE Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(VCC = 12 Vdc, f = 60 MHz, BW = 1.0 MHz, TA = 25°C)
Characteristic
Power Supply Current Drain
AGC Range (AGC) 5.0 V Min to 7.0 V Max
Output Stage Current (Sum of Pins 1 and 8)
Single–Ended Power Gain RS = RL = 50
Ω
Noise Figure RS = 50 Ohms
Power Dissipation
Figure
–
19
–
19
19
–
Symbol
ICC
MAGC
IO
GP
NF
PD
Min
–
–60
4.0
40
–
–
Typ
–
–
–
–
6.0
168
Max
17
–
7.5
–
–
204
Unit
mA
dB
mA
dB
dB
mW
Figure 1. Unneutralized Power Gain versus
Frequency (Tuned Amplifier, See Figure 19)
AC , SINGLE±ENDED VOLTAGE GAIN (dB)
70
G P , UNNEUTRALIZED GAIN (dB)
(SINGLE–ENDED OUTPUT)
60
50
40
30
20
10
0
10
20
50
f, FREQUENCY (MHZ)
100
200
VCC = 12 Vdc
50
40
30
20
10
0
Figure 2. Voltage Gain versus Frequency
(Video Amplifier, See Figure 20)
RL = 1.0 k
VCC = 12 Vdc
RL = 100
Ω
RL = 10
Ω
0.1
1.0
10
f, FREQUENCY (MHZ)
100
1000
Figure 3. Dynamic Range: Output Voltage versus
Input Voltage (Video Amplifier, See Figure 20)
10
V O, OUTPUT VOLTAGE (V RMS)
AV , SINGLE VOLTAGE GAIN (dB)
5.0
1.0
0.5
RL = 1.0 k
0.1
0.05
100
Ω
10
Ω
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
VCC = 12 Vdc
V5(AGC) = 0 V
f = 1.0 MHz
50
Figure 4. Voltage Gain versus Frequency
(Video Amplifier, See Figure 20)
VCC = 6.3 Vdc
40
30
20
10
0
0.3
100
Ω
RL = 1.0 kΩ
0.5 1.0
3.0 5.0
10
30
50
100
300
en, INPUT VOLTAGE (mVRMS)
f, FREQUENCY (MHZ)
Page 2 of 8
www.lansdale.com
Issue A
ML1490
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 5. Voltage Gain and Supply Current versus
Supply Voltage (Video Amplifier, See Figure 20)
AV, SINGLE±ENDED VOLTAGE GAIN (dB)
45
40
35
30
25
20
15
10
5.0
0
2.0
4.0
6.0
8.0
10
12
14
16
VCC, SUPPLY VOLTAGE (V)
ICC
f = 1.0 MHz
Rl = 1.0
Ω
AV
24
I C , SUPPLY CURRENT (mAdc)
GR , GAIN REDUCTION (dB)
21
18
15
12
9.0
6.0
3.0
0
0
10
20
30
40
50
60
70
80
0
3.0
6.0
9.0
12
15
18
21
24
27
30
VR(AGC), AGC VOLTAGE (Vdc)
RAGC = 0
Ω
RAGC = 5.6 kΩ
RAGC = 100 kΩ
VR(AGC)
RAGC
5
MC1490P
Figure 6. Typical Gain Reduction
versus AGC Voltage
Figure 7. Typical Gain Reduction
versus AGC Current
0
GR , GAIN REDUCTION (dB)
10
G p ,POWER GAIN (dB)
20
30
40
50
60
70
80
–40 –20
0
20
40
60
80
100
120
140 160
IAGC AGC CURRENT (µA)
100 < RAGC < 100 k
Figure 8. Fixed Tuned Power Gain Reduction versus
Temperature (See Test Circuit, Figure 19)
50
40
30
20
10
0
–10
–20
5.0
5.2
VCC = 12 Vdc
f = 60 MHz
RAGC = 5.6 kΩ
5.4
5.6
5.8
6.0
6.2
6.4
+75°C
–55°C
0°C
+25°C
+125°C
6.6
6.8
7.0
VR(AGC), AGC VOLTAGE (Vdc)
Figure 9. Power Gain versus Supply Voltage
(See Test Circuit, Figure 19)
80
70
Gp , POWER GAIN (dB)
60
50
40
30
20
10
0
0
2.0
4.0
6.0
8.0
10
12
14
16
VCC, POWER SUPPLY VOLTAGE (V)
GP
NF, NOISE FIGURE (dB)
f = 60 MHz
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
15
Figure 10. Noise Figure versus Frequency
RS Optimized
for minimum NF
20
25
30 35 40
50
60 70 80 90 100
150
f, FREQUENCY (MHz)
Page 3 of 8
www.lansdale.com
Issue A
ML1490
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 11. Noise Figure versus
Source Resistance
20
18
NF, NOISE FIGURE (dB)
16
14
12
10
8.0
6.0
4.0
2.0
0
100
200
400 600
1.0 k
2.0 k
4.0 k
10 k
RS, SOURCE RESISTANCE (Ω)
f = 30 MHz
VCC = 12 Vdc
f = 105 MHz
f = 60 MHz
NOISE FIGURE (dB)
40
35
30
25
20
15
10
5
0
0
–10
–20
–30
–40
–50
–60
–70
–80
GR, GAIN REDUCTION (dB)
Test circuit has tuned input
providing a source resistance
optimized for best noise figure.
f = 30 MHz
BW = 1.0 MHz
Figure 12. Noise Figure versus
AGC Gain Reduction
Figure 13. Harmonic Distortion versus AGC Gain
Reduction for AM Carrier (For Test Circuit, See Figure 14)
40
HARMONIC DISTORTION IN DETECTED
MODULATION (%)
35
30
25
20
15
10
5.0
0
0
10
20
30
40
50
60
70
80
GR, GAIN REDUCTION (dB)
EO = 2400 mVpp
240 mVpp
f = 10.7 MHz
Modulation: 90 % AM, f m = 1.0 kHz
Load at Pin 8 = 2.0 kΩ
EO = peak–to–peak envelope of
modulated 10.7 MHz carrier at Pin 8
760 mVpp
Figure 14. 10.7 MHz Amplifier Gain
7
0.002
6
VAGC
10.7 MHz
(50
Ω
Source)
5.6 k
5
4
82 pF
50–150 pF
L1
ML1490
55 dB, BW
100 kHz
8
1
36 pF
50
Ω
Load
L2
RFC
+12 Vdc
0.002
3
2
0.002
L1 = 24 turns, #22 AWG wire
on a T12–44 micro metal
Toroid core (–124 pF)
L2 = 20 turns, #22 AWG wire
on a T12–44 micro metal
Toroid core (–100 pF)
Page 4 of 8
www.lansdale.com
Issue A
ML1490
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 15. S11 and S22, Input and Output
Reflection Coefficient
Figure 16. S11 and S22, Input and Output
Reflection Coefficient
Figure 17. S21, Forward Transmission
Coefficient (Gain)
70 MHz
80 MHz
10 100 MHz
120 MHz
150 MHz
Figure 18. S12, Reverse Transmission
Coefficient (Feedback)
5.0
60 MHz
50 MHz
5.0
40 MHz
10
30 MHz
20 MHz
15
10 MHz
200 MHz
Page 5 of 8
www.lansdale.com
Issue A
京公网安备 11010802033920号
EEWORLD
