71T75902S75PFI8 datasheet, PDF

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71T75902S75PFI8: DescriptionZBT SRAM, 1MX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100; Categorystorage; File Size644KB，26 Pages; ManufacturerIDT (Integrated Device Technology)

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71T75902S75PFI8 Overview

ZBT SRAM, 1MX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

71T75902S75PFI8 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFP
package instruction	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Contacts	100
Reach Compliance Code	not_compliant
ECCN code	3A991
Maximum access time	7.5 ns
Other features	FLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	18874368 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
power supply	2.5 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.06 A
Minimum standby current	2.38 V
Maximum slew rate	0.295 mA
Maximum supply voltage (Vsup)	2.625 V
Minimum supply voltage (Vsup)	2.375 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm
Base Number Matches	1

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512K x 36, 1M x 18

2.5V Synchronous ZBT™ SRAMs

2.5V I/O, Burst Counter

Flow-Through Outputs

IDT71T75702

IDT71T75902

Features

512K x 36, 1M x 18 memory configurations

Supports high performance system speed - 100 MHz

(7.5 ns Clock-to-Data Access)

ZBT

Feature - No dead cycles between write and read cycles

Internally synchronized output buffer enable eliminates the

need to control

Single R/W (READ/WRITE) control pin

4-word burst capability (Interleaved or linear)

Individual byte write (BW

) control (May tie active)

Three chip enables for simple depth expansion

2.5V power supply (±5%)

2.5V (±5%) I/O Supply (V

DDQ

)

Power down controlled by ZZ input

Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA)

Description

The IDT71T75702/902 are 2.5V high-speed 18,874,368-bit

(18 Megabit) synchronous SRAMs organized as 512K x 36 /1M x 18.

They are designed to eliminate dead bus cycles when turning the bus

around between reads and writes, or writes and reads. Thus they have

been given the name ZBT

, or Zero Bus Turnaround.

Address and control signals are applied to the SRAM during one clock

cycle, and on the next clock cycle the associated data cycle occurs, be

it read or write.

The IDT71T75702/902 contain address, data-in and control signal

registers. The outputs are flow-through (no output data register). Output

enable is the only asynchronous signal and can be used to disable the

outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71T75702/902

to be suspended as long as necessary. All synchronous inputs are

ignored when

CEN

is high and the internal device registers will hold their

previous values.

There are three chip enable pins (CE

, CE

) that allow the

user to deselect the device when desired. If any one of these three is not

asserted when ADV/LD is low, no new memory operation can be initiated.

However, any pending data transfers (reads or writes) will be completed.

The data bus will tri-state one cycle after the chip is deselected or a write

is initiated.

The IDT71T75702/902 have an on-chip burst counter. In the burst

mode, the IDT71T75702/902 can provide four cycles of data for a single

address presented to the SRAM. The order of the burst sequence is

defined by the

LBO

input pin. The

LBO

pin selects between linear and

interleaved burst sequence. The ADV/LD signal is used to load a new

external address (ADV/LD = LOW) or increment the internal burst counter

(ADV/LD = HIGH).

The IDT71T75702/902 SRAMs utilize IDT’s high-performance

CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm

100-pin plastic thin quad flatpack (TQFP) as well as a 119 ball grid array

(BGA).

Pin Description Summary

-A

, CE

R/W

CEN

CLK

ADV/LD

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enables

Output Enable

Read/Write Signal

Clock Enable

Individual Byte Write Selects

Clock

Advance Burst Address/Load New Address

Linear/Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input/Output

Core Power, I/O Power

Ground

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Static

N/A

Asynchronous

Synchronous

Static

APRIL 2004

DSC-5319/08

5319 tbl 01

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