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110CNQ045APBF

Description
55 A, 45 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size171KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

110CNQ045APBF Overview

55 A, 45 V, SILICON, RECTIFIER DIODE

110CNQ045APBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Contacts3
Manufacturer packaging codeD61-8
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current5400 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current55 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-21000 01/05
110CNQ045APbF
110CNQ045ASMPbF
SCHOTTKY RECTIFIER
New GenIII D-61 Package
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 55 Apk, T
J
= 125 °C
(per leg)
range
110 Amp
Description/ Features
Values
110
45
5400
0.5
Units
A
V
A
V
The center tap Schottky rectifier module has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable opera-
tion up to 150 °C junction temperature. Typical applications
are in switching power supplies, converters, free-wheeling
diodes, and reverse battery protection.
150 °C T
J
operation
Center tap module
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Low profile, small footprint, high current package
- 55 to 150
°C
New fully transfer-mold low profile, small
footprint, high current package
Through-hole versions are currently available for use in
Lead-Free applications ("PbF" suffix)
Case Styles
110CNQ045APbF
110CNQ045ASMPbF
D61-8
www.irf.com
D61-8-SM
1

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