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BC318C

Description
PNP Epitaxial Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size69KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BC318C Overview

PNP Epitaxial Silicon Transistor

BC318C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BC318C — PNP Epitaxial Silicon Transistor
September 2007
BC318C
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
Value
30
20
5
100
-55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
CES
I
CBO
h
FE
V
CE
(sat)
V
BE
(on)
C
cb
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Test Condition
I
C
= 10μA
I
C
= 1mA
I
E
= 100μA
I
C
= 100μA
V
CB
= 20V
T = 25
°C
T = 100
°C
Min.
30
20
5
30
Typ.
Max.
Units
V
V
V
V
30
15
100
420
800
0.2
0.5
0.57
0.72
0.77
4
nA
μA
V
CE
= 5V, I
C
= 10
μA
V
CE
= 5V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5V, I
C
= 2m
V
CE
= 5V, I
C
= 10mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
V
pF
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
© 2007 Fairchild Semiconductor Corporation
BC318C Rev. 1.0.0
1
www.fairchildsemi.com
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