5962-0250101VXC datasheet, PDF

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5962-0250101VXC: DescriptionStandard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32; Categorystorage; File Size1MB，14 Pages; Manufacturere2v technologies

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5962-0250101VXC Overview

Standard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32

5962-0250101VXC Parametric

Parameter Name	Attribute value
Maker	e2v technologies
Parts packaging code	DFP
package instruction	QFF,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	40 ns
JESD-30 code	R-XDFP-F32
JESD-609 code	e4
length	20.825 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	UNSPECIFIED
encapsulated code	QFF
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.72 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.415 mm
Base Number Matches	1

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Features

•

Operating Voltage: 3.3V

•

Access Time: 40 ns

•

Very Low Power Consumption

•

– Active: 160 mW (Max)

– Standby: 70 µW (Typ)

Wide Temperature Range: -55°C to +125°C

MFP 32 leads 400 Mils Width Package

TTL Compatible Inputs and Outputs

Asynchronous

Designed on 0.35µm Process

No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019

Quality grades: QML Q or V with SMD 5962-02501

Description

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current with a fast access time at 40 ns. The high stabil-

ity of the 6T cell provides excellent protection against soft errors due to noise.

The M65609E is processed according to the methods of the latest revision of the MIL

PRF 38535 and ESCC 9000.

It is produced on the same process as the MH1RT sea of gates series.

Rad Hard

128K x 8

3.3-volt

Very Low Power

CMOS SRAM

M65609E

Rev. 4158I–AERO–07/07

5962-0250101VXC Related Products

	5962-0250101VXC	5962R0250101VXC	5962-0250101QXC
Description	Standard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32	Standard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32	128K X 8 STANDARD SRAM, 40 ns, DFP32, 0.400 INCH, DFP-32
Maker	e2v technologies	e2v technologies	e2v technologies
Parts packaging code	DFP	DFP	DFP
package instruction	QFF,	QFF,	0.400 INCH, DFP-32
Contacts	32	32	32
Reach Compliance Code	unknown	unknown	unknown
Base Number Matches	1	1	1
ECCN code	3A001.A.2.C	3A001.A.2.C	-
Maximum access time	40 ns	40 ns	-
JESD-30 code	R-XDFP-F32	R-XDFP-F32	-
JESD-609 code	e4	e4	-
length	20.825 mm	20.825 mm	-
memory density	1048576 bit	1048576 bit	-
Memory IC Type	STANDARD SRAM	STANDARD SRAM	-
memory width	8	8	-
Number of functions	1	1	-
Number of terminals	32	32	-
word count	131072 words	131072 words	-
character code	128000	128000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	125 °C	125 °C	-
Minimum operating temperature	-55 °C	-55 °C	-
organize	128KX8	128KX8	-
Package body material	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	QFF	QFF	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	FLATPACK	FLATPACK	-
Parallel/Serial	PARALLEL	PARALLEL	-
Certification status	Not Qualified	Not Qualified	-
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	-
Maximum seat height	2.72 mm	2.72 mm	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	-
surface mount	YES	YES	-
technology	CMOS	CMOS	-
Temperature level	MILITARY	MILITARY	-
Terminal surface	GOLD	GOLD	-
Terminal form	FLAT	FLAT	-
Terminal pitch	1.27 mm	1.27 mm	-
Terminal location	DUAL	DUAL	-
width	10.415 mm	10.415 mm	-

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