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IDT78C16A350LB

Description
EEPROM, 2KX8, 350ns, Parallel, CMOS, CQCC32
Categorystorage   
File Size259KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT78C16A350LB Overview

EEPROM, 2KX8, 350ns, Parallel, CMOS, CQCC32

IDT78C16A350LB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
package instructionQCCN, LCC32,.45X.55
Reach Compliance Codenot_compliant
Maximum access time350 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-XQCC-N32
JESD-609 codee0
memory density16384 bit
Memory IC TypeEEPROM
memory width8
Number of terminals32
word count2048 words
character code2000
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Package body materialCERAMIC
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0009 A
Maximum slew rate0.125 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature6
switch bitNO
Maximum write cycle time (tWC)10 ms
Base Number Matches1
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