IDT71V3556XSA166BGG8 datasheet, PDF

IDT71V3556XSA166BGG8: DescriptionZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA119; Categorystorage; File Size2MB，29 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT71V3556XSA166BGG8 Overview

ZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA119

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
package instruction	BGA, BGA119,7X17,50
Reach Compliance Code	compliant
Maximum access time	3.5 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e1
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of terminals	119
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.04 A
Minimum standby current	3.14 V
Maximum slew rate	0.35 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
Base Number Matches	1

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