|
82S212/BWA-40 |
82S212/BWA |
| Description |
Cache SRAM, 256X9, 70ns, TTL, CDIP22 |
Cache SRAM, 256X9, 70ns, TTL, CDIP22 |
| Maker |
YAGEO |
YAGEO |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
3A001.A.2.C |
3A001.A.2.C |
| Maximum access time |
70 ns |
70 ns |
| JESD-30 code |
R-CDIP-T22 |
R-CDIP-T22 |
| memory density |
2304 bit |
2304 bit |
| Memory IC Type |
CACHE SRAM |
CACHE SRAM |
| memory width |
9 |
9 |
| Number of functions |
1 |
1 |
| Number of ports |
1 |
1 |
| Number of terminals |
22 |
22 |
| word count |
256 words |
256 words |
| character code |
256 |
256 |
| Operating mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
| Maximum operating temperature |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
| organize |
256X9 |
256X9 |
| Output characteristics |
3-STATE |
3-STATE |
| Exportable |
YES |
YES |
| Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
| Parallel/Serial |
PARALLEL |
PARALLEL |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum supply voltage (Vsup) |
5.25 V |
5.25 V |
| Minimum supply voltage (Vsup) |
4.75 V |
4.75 V |
| Nominal supply voltage (Vsup) |
5 V |
5 V |
| surface mount |
NO |
NO |
| technology |
TTL |
TTL |
| Temperature level |
MILITARY |
MILITARY |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
DUAL |
DUAL |
| Base Number Matches |
1 |
1 |