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MMBFJ309

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
CategoryDiscrete semiconductor    The transistor   
File Size47KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBFJ309 Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET

超高频波段, 硅, N沟道, 射频小信号, 结型场效应管

MMBFJ309 Parametric

Parameter NameAttribute value
MakerPANJIT
package instruction,
Reach Compliance Codecompli
FET technologyJUNCTION
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.35 W
surface mountYES

MMBFJ309 Preview

Download Datasheet
MMBFJ309 / MMBFJ310
J-FET HIGH FREQUENCY
AMPLIFIER TRANSISTOR
N-CHANNEL
For VHF/UHF Applications
3
G
S
1
D
2
1
2
3
DEVICE MARKING
MMBFJ309 = B9J; MMBFJ310 = B1J
SOT-23
Note: Drain and Source are
interchangeable.
ELECTRICAL RATINGS
Rating
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Symbol
V
DS
V
GS
I
G
Value
25
25
10
Units
V
V
mAdc
THERMAL RATINGS
Rating
Power Dissipation (Note 1)
Thermal Resistance - Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
d
R
JA
TJ
T
stg
Value
225
556
-55 to +150
-55 to +150
Units
mW
°C/W
°C
°C
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
9/19/2005
Page
1
www.panjit.com
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