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BAS16LT1

Description
RECTIFIER DIODE,75V V(RRM),SOT-23
CategoryDiscrete semiconductor    diode   
File Size48KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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BAS16LT1 Overview

RECTIFIER DIODE,75V V(RRM),SOT-23

BAS16LT1 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transys
Electronics
L I M I T E D
SOT-23 Plastic-Encapsulated Diodes
BAS16LT1
FEATURES
Power dissipation
P
D:
225
mW (Tamb=25℃)
1. 0
2. 4
1. 3
SWITCHING DIODE
SOT-23
T
J
, T
stg
: -55℃ to +150℃
0. 95
Unit: mm
M ki ng A6
ar
M ki ng A6
ar
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
unless otherwise specified)
Test
conditions
MIN
75
1
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=75V
0. 4
Forward Current
200 m A
I
F:
Reverse Voltage
75
V
V
R
:
Operating and storage junction temperature range
2. 9
1. 9
0. 95
µ
A
I
F
=1mA
Forward
voltage
V
F
I
F
=10mA
I
F
=50mA
I
F
=150mA
Diode
capacitance
C
D
t
rr
715
855
1000
1250
2
6
mV
V
R
=0V, f=1MHz
pF
nS
Reverse recovery time
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