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BAS516

Description
0.25 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size91KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric View All

BAS516 Overview

0.25 A, SILICON, SIGNAL DIODE

BAS516 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
Maximum non-repetitive peak forward current4 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.25 A
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Transys
Electronics
L I M I T E D
SOD-523 Plastic-Encapsulated Diodes
BAS516
Switching Diodes
FEATURES
Small surface mounting type
High switching speed
Marking: 61
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Limits
75
250
0.5
150
-65~+150
Unit
V
mA
A
Electrical Ratings @T
A
=25℃
Parameter
Symbol
Min.
Typ.
Max.
0.715
0.855
1
1.25
0.03
1
1
4
Unit
Conditions
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=25V
V
R
=75V
V
R
=0, f=1MHZ
I
F
=10mA, R
L
=100Ω
Forward voltage
V
F
V
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
C
T
t
rr
µA
pF
ns

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Index Files: 1775  964  826  1779  1866  36  20  17  38  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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