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BAS40W-05

Description
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size58KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric Compare View All

BAS40W-05 Overview

0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS40W-05 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknow
BAS40W SERIES
FEATURES
SCHOTTKY DIODE
SOT-323
1. 25¡ À0. 05
1. 01 R
EF
Power dissipation
P
D:
200
mW (Tamb=25℃)
1. 30¡ À0. 03
2. 30¡ À0. 05
Collector current
200
mA
I
F:
Collector-base voltage
40
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Unit: mm
BAS40W Marking: 43.K43
BAS40W-04 Marking:44.K44
BAS40W-05 Marking: 45.K45
BAS40W-06 Marking: 46.K46
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V
(BR) R
I
R
V
F
C
D
t
rr
unless otherwise specified)
Test
conditions
I
R
= 10µA
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0V, f=1MHz
I
F
=10mA through
I
R
=10mA to IR=1mA
MIN
40
200
380
1000
5
5
MAX
UNIT
V
0. 30
2. 00¡ À0. 05
nA
mV
pF
nS

BAS40W-05 Related Products

BAS40W-05 BAS40W BAS40W-04 BAS40W-06
Description 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Maker Transys Electronics Limited Transys Electronics Limited Transys Electronics Limited Transys Electronics Limited
Reach Compliance Code unknow unknow unknow unknow
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